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Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation.

Longda ZhouJie LiZheng QiaoPengpeng RenZixuan SunJianping WangBlacksmith WuZhigang JiRunsheng WangKanyu CaoRu Huang
Published in: IRPS (2023)
Keyphrases
  • key features
  • main memory
  • dynamic random access memory
  • protein fold recognition
  • data sets
  • high speed
  • multiscale
  • mechanism design
  • low voltage