Shaofeng Guo

Publication Activity (10 Years)

Years Active: 2017-2020
Publications (10 Years): 8

Top Topics

Delay Insensitive

Top Venues

Microelectron. Reliab.

Publications

Zuodong Zhang, Runsheng Wang, Zhe Zhang, Yawen Zhang, Shaofeng Guo, Ru Huang
Circuit Reliability Comparison Between Stochastic Computing and Binary Computing. IEEE Trans. Circuits Syst. (12) (2020)
Runsheng Wang, Zhe Zhang, Shaofeng Guo, Qingxue Wang, Dehuang Wu, Joddy Wang, Ru Huang
OMI/TMI-based Modeling and Fast Simulation of Random Telegraph Noise (RTN) in Advanced Logic Devices and Circuits. ASICON (2019)
Shaofeng Guo, Zhenghan Lin, Runsheng Wang, Dongyuan Mao, Yangyuan Wang, Ru Huang
shift induced by random telegraph noise (RTN): physical understanding and prediction method. ISCAS (2018)
Shaofeng Guo, Runsheng Wang, Pengpeng Ren, Changze Liu, Mulong Luo, Xiaobo Jiang, Yangyuan Wang, Ru Huang
Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits. Microelectron. Reliab. 81 (2018)
Shaofeng Guo, Zhenghan Lin, Runsheng Wang, Zexuan Zhang, Zhe Zhang, Yangyuan Wang, Ru Huang
Investigation on the amplitude coupling effect of random telegraph noise (RTN) in nanoscale FinFETs. IRPS (2018)
Che-Lun Hsu, Shaofeng Guo, Yibo Lin, Xiaoqing Xu, Meng Li, Runsheng Wang, Ru Huang, David Z. Pan
Layout-dependent aging mitigation for critical path timing. ASP-DAC (2018)
Shaofeng Guo, Runsheng Wang, Zhuoqing Yu, Peng Hao, Pengpeng Ren, Yangyuan Wang, Siyu Liao, Chunyi Huang, Tianlei Guo, Alvin Chen, Jushan Xie, Ru Huang
Towards reliability-aware circuit design in nanoscale FinFET technology: - New-generation aging model and circuit reliability simulator. ICCAD (2017)
Runsheng Wang, Xiaobo Jiang, Shaofeng Guo, Ru Huang
How close to the CMOS voltage scaling limit for FinFET technology? - Near-threshold computing and stochastic computing. ASICON (2017)