Yangyuan Wang

Publication Activity (10 Years)

Years Active: 2001-2022
Publications (10 Years): 15

Top Topics

Feature Extractor

Schottky Barrier

Modeling Framework

Top Venues

IEEE Trans. Circuits Syst. I Regul. Pap.

Sci. China Inf. Sci.

Publications

Mengxuan Yang, Qianqian Huang, Kaifeng Wang, Chang Su, Liang Chen, Yangyuan Wang, Ru Huang
Physical investigation of subthreshold swing degradation behavior in negative capacitance FET. Sci. China Inf. Sci. 65 (6) (2022)
Mengxuan Yang, Qianqian Huang, Chang Su, Liang Chen, Yangyuan Wang, Ru Huang
Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors. Sci. China Inf. Sci. 65 (6) (2022)
Zhixuan Wang, Le Ye, Ying Liu, Peng Zhou, Zhichao Tan, Haitao Fan, Yihan Zhang, Jiayoon Ru, Yangyuan Wang, Ru Huang
12.1 A 148nW General-Purpose Event-Driven Intelligent Wake-Up Chip for AIoT Devices Using Asynchronous Spike-Based Feature Extractor and Convolutional Neural Network. ISSCC (2021)
Zhixuan Wang, Hao Zhang, Yihan Zhang, Linxiao Shen, Jiayoon Ru, Haitao Fan, Zhichao Tan, Yangyuan Wang, Le Ye, Ru Huang
A Software-Defined Always-On System With 57-75-nW Wake-Up Function Using Asynchronous Clock-Free Pipelined Event-Driven Architecture and Time-Shielding Level-Crossing ADC. IEEE J. Solid State Circuits 56 (9) (2021)
Zhixuan Wang, Ying Liu, Peng Zhou, Zhichao Tan, Haitao Fan, Yihan Zhang, Linxiao Shen, Jiayoon Ru, Yangyuan Wang, Le Ye, Ru Huang
A 148-nW Reconfigurable Event-Driven Intelligent Wake-Up System for AIoT Nodes Using an Asynchronous Pulse-Based Feature Extractor and a Convolutional Neural Network. IEEE J. Solid State Circuits 56 (11) (2021)
Zhixuan Wang, Le Ye, Qianqian Huang, Kaixuan Du, Zhichao Tan, Yangyuan Wang, Ru Huang
Ultra-Low-Power and Performance-Improved Logic Circuit Using Hybrid TFET-MOSFET Standard Cells Topologies and Optimized Digital Front-End Process. IEEE Trans. Circuits Syst. I Regul. Pap. 68 (3) (2021)
Zhixuan Wang, Le Ye, Qianqian Huang, Yangyuan Wang, Ru Huang
Re-Assessment of Steep-Slope Device Design From a Circuit-Level Perspective Using Novel Evaluation Criteria and Model-Less Method. IEEE Trans. Circuits Syst. I Regul. Pap. 68 (4) (2021)
Le Ye, Zhixuan Wang, Ying Liu, Peiyu Chen, Heyi Li, Hao Zhang, Meng Wu, Wei He, Linxiao Shen, Yihan Zhang, Zhichao Tan, Yangyuan Wang, Ru Huang
The Challenges and Emerging Technologies for Low-Power Artificial Intelligence IoT Systems. IEEE Trans. Circuits Syst. I Regul. Pap. 68 (12) (2021)
Zhixuan Wang, Le Ye, Hao Zhanq, Jiayoon Ru, Haitao Fan, Yangyuan Wang, Ru Huang
20.2 A 57nW Software-Defined Always-On Wake-Up Chip for IoT Devices with Asynchronous Pipelined Event-Driven Architecture and Time-Shielding Level-Crossing ADC. ISSCC (2020)
Zhixuan Wang, Yuan Zhong, Cheng Chen, Le Ye, Qianqian Huang, Libo Yang, Yangyuan Wang, Ru Huang
Ultra-Low Power Hybrid TFET-MOSFET Topologies for Standard Logic Cells with Improved Comprehensive Performance. ISCAS (2019)
Zhe Zhang, Runsheng Wang, Cheng Chen, Qianqian Huang, Yangyuan Wang, Cheng Hu, Dehuang Wu, Joddy Wang, Ru Huang
New-Generation Design-Technology Co-Optimization (DTCO): Machine-Learning Assisted Modeling Framework. CoRR (2019)
Shaofeng Guo, Zhenghan Lin, Runsheng Wang, Dongyuan Mao, Yangyuan Wang, Ru Huang
shift induced by random telegraph noise (RTN): physical understanding and prediction method. ISCAS (2018)
Shaofeng Guo, Runsheng Wang, Pengpeng Ren, Changze Liu, Mulong Luo, Xiaobo Jiang, Yangyuan Wang, Ru Huang
Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits. Microelectron. Reliab. 81 (2018)
Shaofeng Guo, Zhenghan Lin, Runsheng Wang, Zexuan Zhang, Zhe Zhang, Yangyuan Wang, Ru Huang
Investigation on the amplitude coupling effect of random telegraph noise (RTN) in nanoscale FinFETs. IRPS (2018)
Shaofeng Guo, Runsheng Wang, Zhuoqing Yu, Peng Hao, Pengpeng Ren, Yangyuan Wang, Siyu Liao, Chunyi Huang, Tianlei Guo, Alvin Chen, Jushan Xie, Ru Huang
Towards reliability-aware circuit design in nanoscale FinFET technology: - New-generation aging model and circuit reliability simulator. ICCAD (2017)
Yixiao Wang, Le Ye, Huailin Liao, Ru Huang, Yangyuan Wang
Highly Reconfigurable Analog Baseband for Multistandard Wireless Receivers in 65-nm CMOS. IEEE Trans. Circuits Syst. II Express Briefs (3) (2015)
Long Chen, Yixiao Wang, Chuan Wang, Jiayi Wang, Congyin Shi, Xuankai Weng, Le Ye, Junhua Liu, Huailin Liao, Yangyuan Wang
72 mW Multistandard Direct-Conversion DTV Tuner in 65 nm CMOS. IEEE Trans. Circuits Syst. I Regul. Pap. (1) (2014)
Ru Huang, Yimao Cai, Yefan Liu, Wenliang Bai, Yongbian Kuang, Yangyuan Wang
Resistive switching in organic memory devices for flexible applications. ISCAS (2014)
Runsheng Wang, Tao Yu, Ru Huang, Yangyuan Wang
Impacts of short-channel effects on the random threshold voltage variation in nanoscale transistors. Sci. China Inf. Sci. 56 (6) (2013)
Zhan Zhan, Qianqian Huang, Ru Huang, Wenzhe Jiang, Yangyuan Wang
A comb-gate silicon tunneling field effect transistor with improved on-state current. Sci. China Inf. Sci. 56 (7) (2013)
Le Ye, Congyin Shi, Huailin Liao, Ru Huang, Yangyuan Wang
Highly Power-Efficient Active-RC Filters With Wide Bandwidth-Range Using Low-Gain Push-Pull Opamps. IEEE Trans. Circuits Syst. I Regul. Pap. (1) (2013)
Zhihua Dong, Jinyan Wang, Cheng P. Wen, Shenghou Liu, Rumin Gong, Min Yu, Yilong Hao, Fujun Xu, Bo Shen, Yangyuan Wang
High temperature induced failure in Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructure. Microelectron. Reliab. 52 (2) (2012)
Lingjuan Wu, Jennifer Trezzo, Diba Mirza, Paul L. D. Roberts, Jules S. Jaffe, Yangyuan Wang, Ryan Kastner
Designing an Adaptive Acoustic Modem for Underwater Sensor Networks. IEEE Embed. Syst. Lett. 4 (1) (2012)
Jiapeng Zheng, Wei Li, Xueqing Lu, Yuhua Cheng, Yangyuan Wang
A low power and small area all digital delay-locked loop based on ring oscillator architecture. Sci. China Inf. Sci. 55 (2) (2012)
Yandong He, Xing Zhang, Yangyuan Wang
Process optimization of plasma nitridation SiON for 65 nm node gate dielectrics. Sci. China Inf. Sci. 54 (12) (2011)
Ru Huang, Runsheng Wang, Jing Zhuge, Changze Liu, Tao Yu, Liangliang Zhang, Xin Huang, Yujie Ai, Jinbin Zou, Yuchao Liu, Jiewen Fan, Huailin Liao, Yangyuan Wang
Characterization and analysis of gate-all-around Si nanowire transistors for extreme scaling. CICC (2011)
Yangyuan Wang
The driving force for development of IC and system in future: Reducing the power consumption and improving the ratio of performance to power consumption. Sci. China Inf. Sci. 54 (5) (2011)
Ru Huang, Runsheng Wang, Changze Liu, Liangliang Zhang, Jing Zhuge, Yu Tao, Jinbin Zou, Yuchao Liu, Yangyuan Wang
HCI and NBTI induced degradation in gate-all-around silicon nanowire transistors. Microelectron. Reliab. 51 (9-11) (2011)
Wei Liu, Wei (Ruth) Li, Peng Ren, Chinglong Lin, Shengdong Zhang, Yangyuan Wang
A PVT Tolerant 10 to 500 MHz All-Digital Phase-Locked Loop With Coupled TDC and DCO. IEEE J. Solid State Circuits 45 (2) (2010)
Ming Li, Jinfeng Kang, Yangyuan Wang
A novel voltage-type sense amplifier for low-power nonvolatile memories. Sci. China Inf. Sci. 53 (8) (2010)
Le Ye, Huailin Liao, Fei Song, Jiang Chen, Chen Li, Jinshu Zhao, Ruiqiang Liu, Chuan Wang, Congyin Shi, Junhua Liu, Ru Huang, Yangyuan Wang
A Single-Chip CMOS UHF RFID Reader Transceiver for Chinese Mobile Applications. IEEE J. Solid State Circuits 45 (7) (2010)
Jian Wang, Wenhua Wang, Ru Huang, Yunpeng Pei, Shoubin Xue, Xin'an Wang, Chunhui Fan, Yangyuan Wang
Deteriorated radiation effects impact on the characteristics of MOS transistors with multi-finger configuration. Microelectron. Reliab. 50 (8) (2010)
Ru Huang, HanMing Wu, Jinfeng Kang, DeYuan Xiao, XueLong Shi, Xia An, Yu Tian, Runsheng Wang, Liangliang Zhang, Xing Zhang, Yangyuan Wang
Challenges of 22 nm and beyond CMOS technology. Sci. China Ser. F Inf. Sci. 52 (9) (2009)
Yangyuan Wang, Xing Zhang, Xiaoyan Liu, Ru Huang
Novel devices and process for 32 nm CMOS technology and beyond. Sci. China Ser. F Inf. Sci. 51 (6) (2008)
Teng Lin, Jianhua Feng, Yangyuan Wang
A New Test Data Compression Scheme for Multi-scan Designs. ISVLSI (2007)
Jin He, Xing Zhang, Ganggang Zhang, Mansun Chan, Yangyuan Wang
A Complete Carrier-Based Non-Charge-Sheet Analytic Theory for Nano-Scale Undoped Surrounding-Gate MOSFETs. ISQED (2006)
Fengyi (Fred) Huang, Jingxue Lu, Nan Jiang, Xiaowen Zhang, Wengang Wu, Yangyuan Wang
Frequency-Independent Asymmetric Double-$pi $Equivalent Circuit for On-Chip Spiral Inductors: Physics-Based Modeling and Parameter Extraction. IEEE J. Solid State Circuits 41 (10) (2006)
Jin He, Xing Zhang, Ganggang Zhang, Yangyuan Wang
A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs. ISQED (2006)
Ru Huang, Jinyan Wang, Jin He, Min Yu, Xing Zhang, Yangyuan Wang
Hot carrier degradation behavior in SOI dynamic-threshold-voltage nMOSFET's (n-DTMOSFET) measured by gated-diode configuration. Microelectron. Reliab. 43 (5) (2003)
Jin He, Xing Zhang, Ru Huang, Yangyuan Wang
Application of forward gated-diode R-G current method in extracting F-N stress-induced interface traps in SOI NMOSFETs. Microelectron. Reliab. 42 (1) (2002)
Jin He, Xing Zhang, Ru Huang, Yangyuan Wang
Extraction of the lateral distribution of interface traps in MOSFETs by a novel combined gated-diode technique. Microelectron. Reliab. 41 (12) (2001)
Ru Huang, Weihai Bu, Xing Zhang, Yangyuan Wang
Quasi-two-dimensional subthreshold current model of deep submicrometer SOI drive-in gate controlled hybrid transistors with lateral non-uniform doping profile. Sci. China Ser. F Inf. Sci. 44 (1) (2001)