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Impacts of short-channel effects on the random threshold voltage variation in nanoscale transistors.
Runsheng Wang
Tao Yu
Ru Huang
Yangyuan Wang
Published in:
Sci. China Inf. Sci. (2013)
Keyphrases
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field effect transistors
high density
steady state
mathematical analysis
integrated circuit
power system
real time
neural network
computer simulation
uniformly distributed
threshold selection
false alarm probability