Characterization and analysis of gate-all-around Si nanowire transistors for extreme scaling.
Ru HuangRunsheng WangJing ZhugeChangze LiuTao YuLiangliang ZhangXin HuangYujie AiJinbin ZouYuchao LiuJiewen FanHuailin LiaoYangyuan WangPublished in: CICC (2011)