Changze Liu

Publication Activity (10 Years)

Years Active: 2011-2022
Publications (10 Years): 6

Top Topics

Risk Management

Cmos Technology

Integrated Circuit

Top Venues

Microelectron. Reliab.

Publications

Tinghuan Chen, Qi Sun, Canhui Zhan, Changze Liu, Huatao Yu, Bei Yu
Deep H-GCN: Fast Analog IC Aging-Induced Degradation Estimation. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 41 (7) (2022)
Tinghuan Chen, Qi Sun, Canhui Zhan, Changze Liu, Huatao Yu, Bei Yu
Analog IC Aging-induced Degradation Estimation via Heterogeneous Graph Convolutional Networks. ASP-DAC (2021)
Amita Rawat, Krishna K. Bhuwalka, Philippe Matagne, Bjorn Vermeersch, Hao Wu, Geert Hellings, Julien Ryckaert, Changze Liu
Performance Trade-Off Scenarios for GAA Nanosheet FETs Considering Inner-spacers and Epi-induced Stress: Understanding & Mitigating Process Risks. ESSCIRC (2021)
Amita Rawat, Krishna K. Bhuwalka, Philippe Matagne, Bjorn Vermeersch, Hao Wu, Geert Hellings, Julien Ryckaert, Changze Liu
Performance Trade-Off Scenarios for GAA Nanosheet FETs Considering Inner-spacers and Epi-induced Stress: Understanding & Mitigating Process Risks. ESSDERC (2021)
Pengpeng Ren, Changze Liu, Sanping Wan, Jiayang Zhang, Zhuoqing Yu, Nie Liu, Yongsheng Sun, Runsheng Wang, Canhui Zhan, Zhenghao Gan, Waisum Wong, Yu Xia, Ru Huang
New insights into the HCI degradation of pass-gate transistor in advanced FinFET technology. IRPS (2018)
Shaofeng Guo, Runsheng Wang, Pengpeng Ren, Changze Liu, Mulong Luo, Xiaobo Jiang, Yangyuan Wang, Ru Huang
Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits. Microelectron. Reliab. 81 (2018)
Changze Liu, Hyun-Chul Sagong, Hyejin Kim, Seungjin Choo, Hyunwoo Lee, Yoohwan Kim, Hyunjin Kim, Bisung Jo, Minjung Jin, Jinjoo Kim, Sangsu Ha, Sangwoo Pae, Jongwoo Park
Systematical study of 14nm FinFET reliability: From device level stress to product HTOL. IRPS (2015)
Xin Huang, Tianwei Zhang, Runsheng Wang, Changze Liu, Yuchao Liu, Ru Huang
Self-heating effects in gate-all-around silicon nanowire MOSFETs: Modeling and analysis. ISQED (2012)
Ru Huang, Runsheng Wang, Jing Zhuge, Changze Liu, Tao Yu, Liangliang Zhang, Xin Huang, Yujie Ai, Jinbin Zou, Yuchao Liu, Jiewen Fan, Huailin Liao, Yangyuan Wang
Characterization and analysis of gate-all-around Si nanowire transistors for extreme scaling. CICC (2011)
Ru Huang, Runsheng Wang, Changze Liu, Liangliang Zhang, Jing Zhuge, Yu Tao, Jinbin Zou, Yuchao Liu, Yangyuan Wang
HCI and NBTI induced degradation in gate-all-around silicon nanowire transistors. Microelectron. Reliab. 51 (9-11) (2011)