HCI and NBTI induced degradation in gate-all-around silicon nanowire transistors.
Ru HuangRunsheng WangChangze LiuLiangliang ZhangJing ZhugeYu TaoJinbin ZouYuchao LiuYangyuan WangPublished in: Microelectron. Reliab. (2011)
Keyphrases
- cmos technology
- field effect transistors
- low power
- human computer interaction
- metal oxide semiconductor
- high density
- steady state
- space charge
- silicon dioxide
- power consumption
- parallel processing
- human computer interface
- low voltage
- low cost
- human factors
- semiconductor devices
- mathematical analysis
- field of human computer interaction
- image sensor
- integrated circuit
- high speed
- power dissipation
- human computer interactions
- high power
- artificial neural networks
- interface design
- markov chain
- gate dielectrics
- user interface