Login / Signup

Hot carrier degradation behavior in SOI dynamic-threshold-voltage nMOSFET's (n-DTMOSFET) measured by gated-diode configuration.

Ru HuangJinyan WangJin HeMin YuXing ZhangYangyuan Wang
Published in: Microelectron. Reliab. (2003)
Keyphrases
  • dynamic behavior
  • transmission line
  • dynamic environments
  • social networks
  • high speed
  • computer simulation
  • power system
  • real time