A fast and test-proven methodology of assessing RTN/fluctuation on deeply scaled nano pMOSFETs.
Rui GaoMehzabeen MehediHaibao ChenXinsheng WangJianfu ZhangXiaoling LinZhiyuan HeYiqiang ChenDengyun LeiYun HuangYunfei EnZhigang JiRunsheng WangPublished in: IRPS (2020)