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Lifetime modeling of intrinsic gate oxide breakdown at high temperature.

R. MoonenPiet VanmeerbeekG. LekensWard De CeuninckPeter MoensJ. Boutsen
Published in: Microelectron. Reliab. (2007)
Keyphrases
  • high temperature
  • silicon dioxide
  • leakage current
  • data sets
  • data mining
  • modeling framework
  • silicon nitride
  • energy consumption
  • modeling language
  • field effect transistors