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The electron irradiation effects on silicon gate dioxide used for power MOS devices.
Marian Badila
Philippe Godignon
José Millán
S. Berberich
Gheorghe Brezeanu
Published in:
Microelectron. Reliab. (2001)
Keyphrases
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field effect transistors
semiconductor devices
electron beam
power consumption
steady state
silicon dioxide
high speed
cmos technology
high density
mathematical analysis
embedded devices
mobile applications
nano scale
neural network
real time
x ray
battery life
genetic algorithm
transmission electron microscopy