High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide.
Victor SolerMaria CabelloMaxime BerthouJosep MontserratJosé RebolloPhilippe GodignonAndrei MihailaMaria R. RoginaAlberto RodriguezJavier SebastiánPublished in: IEEE Trans. Ind. Electron. (2017)