Salvador Hidalgo

Publication Activity (10 Years)

Years Active: 2003-2023
Publications (10 Years): 4

Top Topics

Conceptual Schema

Reverse Engineer

Digital Image Processing

Top Venues

J. Hardw. Syst. Secur.

IET Circuits Devices Syst.

Publications

Albert Doblas, David Flores, Salvador Hidalgo, Neil Moffat, Giulio Pellegrini, David Quirion, Jairo Villegas, Dzmitry Maneuski, Marie Ruat, Pablo Fajardo
Inverse LGAD (iLGAD) Periphery Optimization for Surface Damage Irradiation. Sensors 23 (7) (2023)
María del Carmen Jiménez-Ramos, Javier García López, Adrián García-Osuna, Iván Vila, Esteban Currás, Richard Jaramillo, Salvador Hidalgo, Giulio Pellegrini
Study of Ionization Charge Density-Induced Gain Suppression in LGADs. Sensors 22 (3) (2022)
Raul Quijada, Roger Dura, Jofre Pallares, Xavier Formatje, Salvador Hidalgo, Francisco Serra-Graells
Large-Area Automated Layout Extraction Methodology for Full-IC Reverse Engineering. J. Hardw. Syst. Secur. 2 (4) (2018)
Nil Franch, Oscar Alonso, Ángel Diéguez, Salvador Hidalgo, Iván Vila
A Verilog-A model of a silicon resistive strip for particle detectors. SMACD (2016)
Jesús Urresti, Salvador Hidalgo, David Flores, Daniel Fernández Hevia
3.3 kV PT-IGBT with voltage-sensor monolithically integrated. IET Circuits Devices Syst. 8 (3) (2014)
Raul Quijada, Arnau Raventos, Francesc Tarres, Roger Dura, Salvador Hidalgo
The use of digital image processing for IC reverse engineering. SSD (2014)
Pablo Fernández-Martínez, Francisco Rogelio Palomo, S. Díez, Salvador Hidalgo, Miguel Ullán, David Flores, Roland Sorge
Simulation methodology for dose effects in lateral DMOS transistors. Microelectron. J. 43 (1) (2012)
Xavier Perpiñà, Jean-François Serviere, Jesús Urresti-Ibañez, Ignasi Cortés, Xavier Jordà, Salvador Hidalgo, José Rebollo, Michel Mermet-Guyennet
Analysis of Clamped Inductive Turnoff Failure in Railway Traction IGBT Power Modules Under Overload Conditions. IEEE Trans. Ind. Electron. 58 (7) (2011)
X. Perpiñà, Jean-François Serviere, Xavier Jordà, A. Fauquet, Salvador Hidalgo, Jesús Urresti-Ibañez, José Rebollo, Michel Mermet-Guyennet
IGBT module failure analysis in railway applications. Microelectron. Reliab. 48 (8-9) (2008)
Ignasi Cortés, Pablo Fernández-Martínez, David Flores, Salvador Hidalgo, José Rebollo
Superjunction LDMOS on thick-SOI technology for RF applications. Microelectron. J. 39 (6) (2008)
Ignasi Cortés, Pablo Fernández-Martínez, David Flores, Salvador Hidalgo, José Rebollo
Analysis of punch-through breakdown in bulk silicon RF power LDMOS transistors. Microelectron. Reliab. 48 (2) (2008)
Jesús Urresti, Salvador Hidalgo, David Flores, Jaume Roig, Ignasi Cortés, José Rebollo
Lateral punch-through TVS devices for on-chip protection in low-voltage applications. Microelectron. Reliab. 45 (7-8) (2005)
Ignasi Cortés, Jaume Roig, David Flores, Jesús Urresti, Salvador Hidalgo, José Rebollo
Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile. Microelectron. Reliab. 45 (3-4) (2005)
Miquel Vellvehí, David Flores, Xavier Jordà, Salvador Hidalgo, José Rebollo, L. Coulbeck, P. Waind
Design considerations for 6.5 kV IGBT devices. Microelectron. J. 35 (3) (2004)
Jaume Roig, David Flores, Salvador Hidalgo, José Rebollo, José Millán
Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications. Microelectron. J. 35 (3) (2004)
Salvador Hidalgo, David Flores, Isabel Obieta, I. Mazarredo
Passivation and packaging of positive bevelled edge termination and related electrical stability. Microelectron. Reliab. 43 (3) (2003)
Jesús Urresti, Salvador Hidalgo, David Flores, Jaume Roig, José Rebollo, I. Mazarredo
Optimisation of very low voltage TVS protection devices. Microelectron. J. 34 (9) (2003)