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Ignasi Cortés
Publication Activity (10 Years)
Years Active: 2005-2012
Publications (10 Years): 0
Top Topics
Silicon On Insulator
Prior Studies
Main Factors
Top Venues
Microelectron. Reliab.
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Publications
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Ignasi Cortés
,
Xavier Perpiñà
,
Jesús Urresti
,
Xavier Jordà
,
José Rebollo
Study of layout influence on ruggedness of NPT-IGBT devices by physical modelling.
Microelectron. Reliab.
52 (9-10) (2012)
Ignasi Cortés
,
Gaëtan Toulon
,
Frederic Morancho
,
E. Hugonnard-Bruyere
,
B. Villard
,
W. J. Toren
Analysis and optimization of lateral thin-film Silicon-on-insulator (SOI) MOSFET transistors.
Microelectron. Reliab.
52 (3) (2012)
Xavier Perpiñà
,
Jean-François Serviere
,
Jesús Urresti-Ibañez
,
Ignasi Cortés
,
Xavier Jordà
,
Salvador Hidalgo
,
José Rebollo
,
Michel Mermet-Guyennet
Analysis of Clamped Inductive Turnoff Failure in Railway Traction IGBT Power Modules Under Overload Conditions.
IEEE Trans. Ind. Electron.
58 (7) (2011)
Ignasi Cortés
,
Pablo Fernández-Martínez
,
David Flores
,
Salvador Hidalgo
,
José Rebollo
Superjunction LDMOS on thick-SOI technology for RF applications.
Microelectron. J.
39 (6) (2008)
Ignasi Cortés
,
Pablo Fernández-Martínez
,
David Flores
,
Salvador Hidalgo
,
José Rebollo
Analysis of punch-through breakdown in bulk silicon RF power LDMOS transistors.
Microelectron. Reliab.
48 (2) (2008)
Jesús Urresti
,
Salvador Hidalgo
,
David Flores
,
Jaume Roig
,
Ignasi Cortés
,
José Rebollo
Lateral punch-through TVS devices for on-chip protection in low-voltage applications.
Microelectron. Reliab.
45 (7-8) (2005)
Ignasi Cortés
,
Jaume Roig
,
David Flores
,
Jesús Urresti
,
Salvador Hidalgo
,
José Rebollo
Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile.
Microelectron. Reliab.
45 (3-4) (2005)