Gerhard K. M. Wachutka

Publication Activity (10 Years)

Years Active: 1990-2023
Publications (10 Years): 2

Top Topics

Single Nucleotide Polymorphisms

Mass Spectrometry

Top Venues

IEEE Trans. Instrum. Meas.

Microelectron. J.

Microelectron. Reliab.

Publications

Hesham Okeil, Gabriele Schrag, Gerhard K. M. Wachutka
High-Throughput Apparatus for Semiconductor Device Characterization in a Magnetic Field at Extreme High Temperatures. IEEE Trans. Instrum. Meas. 72 (2023)
D. Helmut, Gerhard K. M. Wachutka, Gerhard Groos
Transient analysis of latent damage formation in SMD capacitors by Transmission Line Pulsing (TLP). Microelectron. Reliab. (2017)
Stefan Müller, Thomas Zahner, Frank Singer, Gabriele Schrag, Gerhard K. M. Wachutka
Evaluation of thermal transient characterization methodologies for high-power LED applications. Microelectron. J. 44 (11) (2013)
Gerhard K. M. Wachutka
The art of modeling and predictive simulation in power electronics and microsystems. MIXDES (2013)
Y. C. Gerstenmaier, W. Kiffe, Gerhard K. M. Wachutka
Combination of thermal subsystems by use of rapid circuit transformation and extended two-port theory. Microelectron. J. 40 (1) (2009)
Peter Borthen, Gerhard K. M. Wachutka
Testing semiconductor devices at extremely high operating temperatures. Microelectron. Reliab. 48 (8-9) (2008)
Gerhard K. M. Wachutka
Virtual Prototyping of Microdevices and Microsystems. DistIntellSys (2008)
Alberto Castellazzi, Martin Honsberg-Riedl, Gerhard K. M. Wachutka
Thermal characterisation of power devices during transient operation. Microelectron. J. 37 (2) (2006)
Robert K. Thalhammer, Gerhard K. M. Wachutka
Corrections to "Physically Rigorous Modeling of Internal Laser-Probing Techniques for Microstructured Semiconductor Devices". IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 23 (4) (2004)
Robert K. Thalhammer, Gerhard K. M. Wachutka
Physically rigorous modeling of internal laser-probing techniques for microstructured semiconductor devices. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 23 (1) (2004)
Gerald Sölkner, Winfried Kaindl, Hans-Joachim Schulze, Gerhard K. M. Wachutka
Reliability of power electronic devices against cosmic radiation-induced failure. Microelectron. Reliab. 44 (9-11) (2004)
A. Icaza Deckelmann, Gerhard K. M. Wachutka, Franz Hirler, J. Krumrey, R. Henninger
Avalanche breakdown capability of Power DMOS Transistors and the Wunsch-Bell relation. Microelectron. Reliab. 43 (9-11) (2003)
Philip B. M. Wolbert, Gerhard K. M. Wachutka, Benno H. Krabbenborg, Ton J. Mouthaan
Nonisothermal device simulation using the 2D numerical process/device simulator TRENDY and application to SOI-devices. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 13 (3) (1994)
Gerhard K. M. Wachutka
Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 9 (11) (1990)