Philip Mawby

Publication Activity (10 Years)

Years Active: 2008-2024
Publications (10 Years): 7

Top Topics

Dynamic Characteristics

Power Consumption

Schottky Barrier

Permalloy Films

Top Venues

IEEE Trans. Ind. Electron.

IEEE Trans. Instrum. Meas.

Publications

Oleksii Zinchenko, Simon Mendy, Xiaoyun Rong, Kyrylo Melnyk, Amr Saleh, Olayiwola Alatise, Philip Mawby, Mohamed Taha
A Virtual Platform for EV Drivetrain Testing Based on Low-Power Hardware in the Loop System. ICIT (2024)
Hai Ren, Li Liu, Sinisa Djurovic, Li Ran, Xianming Liu, Hao Feng, Philip Mawby
In Situ Contact Pressure Monitoring of Press Pack Power Module Using FBG Sensors. IEEE Trans. Instrum. Meas. 71 (2022)
Jose Angel Ortiz Gonzalez, Olayiwola Alatise, Attahir Murtala Aliyu, Pushparajah Rajaguru, Alberto Castellazzi, Li Ran, Philip Mawby, Chris Bailey
Evaluation of SiC Schottky Diodes Using Pressure Contacts. IEEE Trans. Ind. Electron. 64 (10) (2017)
Ji Hu, Olayiwola Alatise, Jose Angel Ortiz Gonzalez, Roozbeh Bonyadi, Petros Alexakis, Li Ran, Philip Mawby
Robustness and Balancing of Parallel-Connected Power Devices: SiC Versus CoolMOS. IEEE Trans. Ind. Electron. 63 (4) (2016)
Saeed Jahdi, Olayiwola Alatise, Jose Angel Ortiz Gonzalez, Roozbeh Bonyadi, Li Ran, Philip Mawby
Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules. IEEE Trans. Ind. Electron. 63 (2) (2016)
Saeed Jahdi, Olayiwola Alatise, Petros Alexakis, Li Ran, Philip Mawby
The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs. IEEE Trans. Ind. Electron. 62 (1) (2015)
Saeed Jahdi, Olayiwola Alatise, Li Ran, Philip Mawby
Accurate Analytical Modeling for Switching Energy of PiN Diodes Reverse Recovery. IEEE Trans. Ind. Electron. 62 (3) (2015)
Ian R. Swan, Angus T. Bryant, Philip Mawby
Fast Thermal Models for Power Device Packaging. IAS (2008)