The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs.
Saeed JahdiOlayiwola AlatisePetros AlexakisLi RanPhilip MawbyPublished in: IEEE Trans. Ind. Electron. (2015)
Keyphrases
- dynamic characteristics
- schottky barrier
- field effect transistors
- high density
- tunnel diode
- semiconductor devices
- transmission line
- room temperature
- power system
- permalloy films
- chemical vapor deposition
- neural network model
- steady state
- machine learning
- low cost
- decision making
- differential equations
- thin film
- fuzzy logic
- artificial intelligence
- genetic algorithm
- neural network