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K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W.

Noboru NegoroMasayuki KurodaTomohiro MurataMasaaki NishijimaYoshiharu AndaHiroyuki SakaiTetsuzo UedaTsuyoshi Tanaka
Published in: IEICE Trans. Electron. (2012)
Keyphrases
  • wide range
  • power consumption
  • real time
  • database
  • high precision