Depth profiles of strain in AlGaN/GaN heterostructures grown on Si characterized by electron backscatter diffraction technique.
Teruki IshidoHisayoshi MatsuoTakuma KatayamaTetsuzo UedaKaoru InoueDaisuke UedaPublished in: IEICE Electron. Express (2007)
Keyphrases
- metal oxide
- x ray
- electron microscopy
- electron microscope
- low energy electron
- signal processing
- transmission electron microscopy
- three dimensional
- depth map
- cross section
- data sets
- structuring elements
- depth information
- user profiles
- artificial intelligence
- database
- infrared
- high speed
- thin film
- high quality
- case study
- electron beam
- solar cell
- computer vision
- learning algorithm