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High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps.

Davide FaveroA. CavaliereCarlo De SantiMatteo BorgaW. Gonçalez FilhoKaren GeensBenoit BakerootStefaan DecoutereGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini
Published in: IRPS (2023)
Keyphrases
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