ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric.
Eliana AcurioLionel TrojmanBrice De JaegerBenoit BakerootStefaan DecouterePublished in: IRPS (2021)
Keyphrases
- gate dielectrics
- field effect transistors
- schottky barrier
- high density
- metal oxide
- si sio
- electrical properties
- semiconductor devices
- leakage current
- steady state
- chemical vapor deposition
- x ray
- genetic algorithm
- information systems
- database replication
- real time
- silicon dioxide
- learning algorithm
- mathematical analysis
- thin film
- state space