A 400 μW 4.7-to-6.4GHz VCO under an Above-IC Inductor in 45nm CMOS.
Jonathan BorremansPiet WambacqMaarten KuijkGeert CarchonStefaan DecouterePublished in: ISSCC (2008)
Keyphrases
- metal oxide semiconductor
- integrated circuit
- power consumption
- high speed
- silicon on insulator
- clock gating
- cmos technology
- nm technology
- low power
- hilbert curve
- low cost
- clock frequency
- low voltage
- power dissipation
- analog vlsi
- data sets
- dual band
- focal plane
- real time
- power reduction
- power supply
- image sensor
- neural network
- intel xeon