A 328 μW 5 GHz voltage-controlled oscillator in 90 nm CMOS with high-quality thin-film post-processed inductor.
Dimitri LintenXiao SunGeert CarchonWutthinan JeamsaksiriAbdelkarim MerchaJavier RamosSnezana JeneiLars AspemyrAndries J. ScholtenPiet WambacqStefaan DecoutereStéphane DonnayWalter De RaedtPublished in: CICC (2004)
Keyphrases
- thin film
- post processed
- power consumption
- clock gating
- high quality
- short circuit
- low voltage
- high speed
- post processing
- power supply
- cmos technology
- room temperature
- low power
- high density
- metal oxide
- power dissipation
- nm technology
- multi layer
- grain size
- silicon on insulator
- power reduction
- data center
- power system
- low cost
- high resolution
- metal oxide semiconductor
- transmission line
- solar cell
- differential equations
- digital signal processing
- white light interferometry
- film thickness
- random access memory
- clock frequency
- electron microscopy
- artificial neural networks
- preprocessing