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A 5 GHz fully integrated ESD-protected low-noise amplifier in 90 nm RF CMOS.

Dimitri LintenSteven ThijsMahadeva Iyer NatarajanPiet WambacqWutthinan JeamsaksiriJavier RamosAbdelkarim MerchaSnezana JeneiStéphane DonnayStefaan Decoutere
Published in: ESSCIRC (2004)
Keyphrases
  • fully integrated
  • high speed
  • high sensitivity
  • power consumption
  • frequency band
  • low cost
  • signal to noise ratio
  • low power
  • power supply
  • database
  • databases
  • nm technology