Michael Schröter

Publication Activity (10 Years)

Years Active: 1995-2023
Publications (10 Years): 33

Top Topics

Sensitivity Analysis

Schottky Barrier

Top Venues

Publications

Markus Müller, Christoph Weimer, Michael Schröter
Nonlinear Compact Modeling of InP/InGaAs DHBTs with HICUM/L2. ESSDERC (2023)
Sara Hamzeloui, Akshay M. Arabhavi, Filippo Ciabattini, Mojtaba Ebrahimi, Markus Müller, Olivier Ostinelli, Michael Schröter, Colombo R. Bolognesi
Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHz. BCICTS (2023)
Christoph Weimer, Viktor Kazantsev, Markus Mäller, Michael Schröter
Numerical Device Simulation Aided Study of RF-Stress-Caused Degradation in SiGe HBTs. BCICTS (2023)
Markus Müller, Mario Krattenmacher, Hendrik Leenders, Sara Hamzeloui, Colombo R. Bolognesi, Christoph Jungemann, Michael Schröter
Physics-Based Compact Modeling of the Transfer Current in III-V DHBTs with the Generalized Integral Charge Control Relation. BCICTS (2023)
Markus Müller, Tobias Nardmann, Maximilian Froitzheim, Michael Schröter
Characterization and Modeling of Thermal Coupling in Multi-Finger InP DHBTs. BCICTS (2022)
Xiaodi Jin, Guangsheng Liang, Yves Zimmermann, Gerhard Fischer, Christoph Weimer, Mario Krattenmacher, Yaxin Zhang, Michael Schröter
Thermal impedance of SiGe HBTs: Characterization and modeling. BCICTS (2022)
Christoph Weimer, Xiaodi Jin, Gerhard G. Fischer, Michael Schröter
Characterization of Dynamic Large-Signal Operating Limits and Long-Term RF Reliability of SiGe HBTs. BCICTS (2022)
Michael Schröter, Markus Müller, Mario Krattenmacher
Device modeling tools and their application to SiGe HBT development. BCICTS (2022)
Mario Krattenmacher, Markus Müller, Pascal Kuthe, Michael Schröter
DMT-core: A Python Toolkit for Semiconductor Device Engineers. J. Open Source Softw. 7 (75) (2022)
Tobias Nardmann, Plamen Kolev, Nick Tao, Michael Schröter
Geometry scalable compact modeling of GaAs HBTs. BCICTS (2022)
Boli Peng, Sven Mothes, Manojkumar Annamalai, Michael Schröter
Evaluation of Stacked-CNTFET Structures for High-performance Applications. BCICTS (2021)
S. Phillips, Ed Preisler, J. Zheng, S. Chaudhry, M. Racanelli, M. Müller, Michael Schröter, W. McArthur, D. Howard
Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications. BCICTS (2021)
M. Müller, Michael Schröter, Christoph Jungemann, Christoph Weimer
Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs. BCICTS (2021)
Christoph Weimer, Paulius Sakalas, M. Müller, G. G. Fischer, Michael Schröter
An Experimental Load-Pull Based Large-Signal RF Reliability Study of SiGe HBTs. BCICTS (2021)
Hanbin Ying, Sunil G. Rao, Jeffrey W. Teng, Milad Frounchi, Markus Müller, Xiaodi Jin, Michael Schröter, John D. Cressler
Compact Modeling of SiGe HBTs for Design of Cryogenic Control and Readout Circuits for Quantum Computing. BCICTS (2020)
Xiaodi Jin, Christoph Weimer, Yaxin Zhang, Michael Schröter
Modeling the temperature dependence of sheet and contact resistances in SiGe: C HBTs from 4.3 to 423 K. BCICTS (2020)
Michael Schröter, Andreas Pawlak, A. Mukherjee, Didier Céli, Mario Krattenmacher
HICUM/L2: Extensions over the last decade. BCICTS (2020)
Yaxin Zhang, Wenfeng Liang, Xiaodi Jin, Mario Krattenmacher, Sophia Falk, Paulius Sakalas, Bernd Heinemann, Michael Schröter
3.2-mW Ultra-Low-Power 173-207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation. IEEE J. Solid State Circuits 55 (6) (2020)
Gerhard P. Fettweis, Meik Dorpinghaus, Jerónimo Castrillón, Akash Kumar, Christel Baier, Karlheinz Bock, Frank Ellinger, Andreas Fery, Frank H. P. Fitzek, Hermann Härtig, Kambiz Jamshidi, Thomas Kissinger, Wolfgang Lehner, Michael Mertig, Wolfgang E. Nagel, Giang T. Nguyen, Dirk Plettemeier, Michael Schröter, Thorsten Strufe
Architecture and Advanced Electronics Pathways Toward Highly Adaptive Energy- Efficient Computing. Proc. IEEE 107 (1) (2019)
Paulius Sakalas, A. Mukherjee, Michael Schröter
Distortion Analysis of CE and CB SiGe HBT Power-Cells with fmax beyond 220 GHz for Millimeter-Wave Applications. BCICTS (2019)
Sabine Kolodinski, Boli Peng, C. Esposito, Y. Zimmermann, Michael Schröter, Xin Xu, Paolo Valerio Testa, Corrado Carta, Frank Ellinger, Steffen Lehmann, M. Drescher, Clemens Mart, Maciej Wiatr, Wenke Weinreich, Violetta Sessi, Jens Trommer, Talha Chohan, Halid Mulaosmanovic, Walter M. Weber, Stefan Slesazeck
IPCEI subcontracts contributing to 22-FDX Add-On Functionalities at GF. ESSDERC (2019)
Ahmed Omar, Anindya Mukherjee, Wenfeng Liang, Yaxin Zhang, P. Sakalas, Michael Schröter
82 GHz direct up-converter mixer using double-balanced Gilbert cell with sensitivity analysis at mm-wave frequency. BCICTS (2019)
Michael Schröter, Mario Krattenmacher
Mathematical foundation for constructing accurate dynamic bipolar transistor compact models. BCICTS (2019)
Michael Schröter, Sophia Falk
Modeling High-Current Effects in Bipolar Transistors: A Theory Review. BCICTS (2018)
Gerald Wedel, T. Nardmanrr, Michael Schröter
On the use of Drift-Diffusion and Hydrodynamic Transport Models for Simulating the Negative Differential Mobility Effect. BCICTS (2018)
Igor Bejenari, Michael Schröter, Martin Claus
Analytical drain current model for non-ballistic Schottky-Barrier CNTFETs. ESSDERC (2017)
Michael Schröter, Tommy Rosenbaum, Pascal Chevalier, Bernd Heinemann, Sorin P. Voinigescu, Ed Preisler, Josef Bock, Anindya Mukherjee
SiGe HBT Technology: Future Trends and TCAD-Based Roadmap. Proc. IEEE 105 (6) (2017)
Thomas W. Crowe, William R. Deal, Michael Schröter, Ching-Kuang C. Tzuang, Ke Wu
Terahertz RF Electronics and System Integration [Scanning the Issue]. Proc. IEEE 105 (6) (2017)
Pascal Chevalier, Michael Schröter, Colombo R. Bolognesi, Vincenzo d'Alessandro, Maria Alexandrova, Josef Bock, Ralf Flickiger, Sébastien Fregonese, Bernd Heinemann, Christoph Jungemann, Rickard Lovblom, Cristell Maneux, Olivier Ostinelli, Andreas Pawlak, Niccolò Rinaldi, Holger Rücker, Gerald Wedel, Thomas Zimmer
Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications. Proc. IEEE 105 (6) (2017)
Mathieu Jaoul, Didier Céli, Cristell Maneux, Michael Schröter, Andreas Pawlak
Avalanche compact model featuring SiGe HBTs characteristics up to BVcbo. ESSDERC (2017)
Anindya Mukherjee, Andreas Pawlak, Michael Schröter, Didier Céli, Zoltan Huszka
Implementation and quality testing for compact models implemented in Verilog-A. DATE (2016)
Michael Jenning, Bernhard Klein, Ronny Hahnel, Dirk Plettemeier, David Fritsche, Gregor Tretter, Corrado Carta, Frank Ellinger, Tobias Nardmann, Michael Schröter, Krzysztof Nieweglowski, Karlheinz Bock, Johannes Israel, Andreas Fischer, Najeeb ul Hassan, Lukas Landau, Meik Dorpinghaus, Gerhard P. Fettweis
Energy-Efficient Transceivers for Ultra-Highspeed Computer Board-to-Board Communication. ICUWB (2015)
Anibal Pacheco-Sanchez, Sven Mothes, Martin Claus, Michael Schröter
Contact resistance extraction methods for CNTFETs. ESSDERC (2015)
Jana Tittmann, Sascha Hermann, Stefan E. Schulz, Anibal Pacheco-Sanchez, Martin Claus, Michael Schröter
Hysteresis-free carbon nanotube field-effect transistors without passivation. NANOARCH (2014)
Daniel Foty, Bruce Smith, Saurabh Sinha, Michael Schröter
Expanding wireless bandwidth in a power-efficient way: developing a viable mm-wave radio technology. EWDTS (2013)
Stefaan Decoutere, Stefaan Van Huylenbroeck, Bernd Heinemann, Alexander Fox, Pascal Chevalier, Alain Chantre, Thomas F. Meister, Klaus Aufinger, Michael Schröter
Pushing the speed limits of SiGe: C HBTs up to 0.5 Terahertz. CICC (2009)
Wolfgang Schneider, Michael Schröter, W. Kraus, Holger Wittkopf
Interactive presentation: Statistical simulation of high-frequency bipolar circuits. DATE (2007)
Michael Schröter
High-Frequency Circuit Design Oriented Compact Bipolar Transistor Modeling with HICUM. IEICE Trans. Electron. (6) (2005)
Reimund Wittmann, Jürgen Hartung, Hans-Joachim Wassener, Günther Tränkle, Michael Schröter
Hot Topic Session: RF Design Technology for Highly Integrated Communication Systems. DATE (2003)
Michael Schröter, Hans-Martin Rein, Winfried Rabe, Reinhard Reimann, Hans-Joachim Wassener, Andreas Koldehoff
Physics- and process-based bipolar transistor modeling for integrated circuit design. IEEE J. Solid State Circuits 34 (8) (1999)
Michael Schröter, David J. Walkey
Correction To "Physical Modeling Of Lateral Scaling In Bipolar Transistors". IEEE J. Solid State Circuits 33 (1) (1998)
Michael Schröter, David J. Walkey
Physical modeling of lateral scaling in bipolar transistors. IEEE J. Solid State Circuits 31 (10) (1996)
Michael Schröter, Hans-Martin Rein
Investigation of very fast and high-current transients in digital bipolar IC's using both a new compact model and a device simulator. IEEE J. Solid State Circuits 30 (5) (1995)