3.2-mW Ultra-Low-Power 173-207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation.
Yaxin ZhangWenfeng LiangXiaodi JinMario KrattenmacherSophia FalkPaulius SakalasBernd HeinemannMichael SchröterPublished in: IEEE J. Solid State Circuits (2020)