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Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications.

Pascal ChevalierMichael SchröterColombo R. BolognesiVincenzo d'AlessandroMaria AlexandrovaJosef BockRalf FlickigerSébastien FregoneseBernd HeinemannChristoph JungemannRickard LovblomCristell ManeuxOlivier OstinelliAndreas PawlakNiccolò RinaldiHolger RückerGerald WedelThomas Zimmer
Published in: Proc. IEEE (2017)
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