Sébastien Fregonese

Publication Activity (10 Years)

Years Active: 2004-2023
Publications (10 Years): 8

Top Topics

High Temperature

Millimeter Wave

Cmos Technology

Top Venues

Publications

Thomas Zimmer, Sébastien Fregonese, Anjan Chakravorty
Electro-Thermal Investigation of SiGe HBTs: A Review. BCICTS (2023)
Sébastien Fregonese, Chhandak Mukherjee, Holger Rücker, Pascal Chevalier, Gerhard Fischer, Didier Céli, Marina Deng, Marine Couret, François Marc, Cristell Maneux, Thomas Zimmer
Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance. BCICTS (2021)
Soumya Ranjan Panda, Sébastien Fregonese, Anjan Chakravorty, Thomas Zimmer
TCAD simulation and assessment of anomalous deflection in measured S-parameters of SiGe HBTs in THz range. BCICTS (2019)
D. Fadi, W. Wei, Emiliano Pallecchi, M. Anderson, J. Stake, Marina Deng, Sébastien Fregonese, Thomas Zimmer, Henri Happy
2D RF Electronics: from devices to circuits - challenges and applications. DRC (2018)
Pascal Chevalier, Michael Schröter, Colombo R. Bolognesi, Vincenzo d'Alessandro, Maria Alexandrova, Josef Bock, Ralf Flickiger, Sébastien Fregonese, Bernd Heinemann, Christoph Jungemann, Rickard Lovblom, Cristell Maneux, Olivier Ostinelli, Andreas Pawlak, Niccolò Rinaldi, Holger Rücker, Gerald Wedel, Thomas Zimmer
Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications. Proc. IEEE 105 (6) (2017)
Tony Hanna, Nathalie Deltimple, Sébastien Fregonese
A class-J power amplifier for 5G applications in 28nm CMOS FD-SOI technology. SBCCI (2017)
Tony Hanna, Nathalie Deltimple, Sébastien Fregonese
A wideband highly efficient class-J integrated power amplifier for 5G applications. NEWCAS (2017)
Jorgue Daniel Aguirre Morales, Sébastien Fregonese, C. Mukherjee, Cristell Maneux, Thomas Zimmer, W. Wei, Henri Happy
Physics-based electrical compact model for monolayer Graphene FETs. ESSDERC (2016)
Sébastien Fregonese, Jorgue Daniel Aguirre Morales, Magali De Matos, Cristell Maneux, Thomas Zimmer
Graphene FET evaluation for RF and mmWave circuit applications. ISCAS (2015)
C. Mukherjee, Jorgue Daniel Aguirre Morales, Sébastien Fregonese, Thomas Zimmer, Cristell Maneux, Henri Happy, W. Wei
Characterization and modeling of low-frequency noise in CVD-grown graphene FETs. ESSDERC (2015)
Jorgue Daniel Aguirre Morales, Sébastien Fregonese, C. Mukherjee, Cristell Maneux, Thomas Zimmer
A new physics-based compact model for Bilayer Graphene Field-Effect Transistors. ESSDERC (2015)
Sébastien Fregonese, Rosario D'Esposito, Magali De Matos, Andreas Kohler, Cristell Maneux, Thomas Zimmer
Substrate-coupling effect in BiCMOS technology for millimeter wave applications. NEWCAS (2015)
C. Mukherjee, Sébastien Fregonese, Thomas Zimmer, Cristell Maneux, Henri Happy, David Mele
Qualitative assessment of epitaxial graphene FETs on SiC substrates via pulsed measurements and temperature variation. ESSDERC (2014)
Mario Weis, Sébastien Fregonese, Marco Santorelli, Amit Kumar Sahoo, Cristell Maneux, Thomas Zimmer
Pulsed I(V) - pulsed RF measurement system for microwave device characterization with 80ns/45GHz. ESSDERC (2012)
Si-Yu Liao, Jean-Marie Retrouvey, Guillaume Agnus, Weisheng Zhao, Cristell Maneux, Sébastien Fregonese, Thomas Zimmer, Djaafar Chabi, Arianna Filoramo, Vincent Derycke, Christian Gamrat, Jacques-Olivier Klein
Design and Modeling of a Neuro-Inspired Learning Circuit Using Nanotube-Based Memory Devices. IEEE Trans. Circuits Syst. I Regul. Pap. (9) (2011)
Sébastien Fregonese, Cristell Maneux, Thomas Zimmer
From nanoscale technology scenarios to compact device models for ambipolar devices. ICECS (2010)
Ian O'Connor, Junchen Liu, Frédéric Gaffiot, Fabien Prégaldiny, Christophe Lallement, Cristell Maneux, Johnny Goguet, Sébastien Fregonese, Thomas Zimmer, Lorena Anghel, Trong-Trinh Dang, Régis Leveugle
CNTFET Modeling and Reconfigurable Logic-Circuit Design. IEEE Trans. Circuits Syst. I Regul. Pap. (11) (2007)
Hassène Mnif, Thomas Zimmer, Jean Luc Battaglia, Sébastien Fregonese
Representation of the SiGe HBT's thermal impedance by linear and recursive networks. Microelectron. Reliab. 44 (6) (2004)