Henri Happy

Publication Activity (10 Years)

Years Active: 1990-2024
Publications (10 Years): 8

Top Topics

Radio Frequency

High Temperature

Top Venues

Microelectron. J.

Publications

Alberto Montanaro, Alex Boschi, Guillaume Ducournau, Vaidotas Miseikis, Stefano Soresi, Mario G. L. Frecassetti, Paola Galli, Henri Happy, Sergio Pezzini, Camilla Coletti, Marco Romagnoli, Vito Sorianello
Integrated twisted bilayer graphene photonic upconverter for D-Band wireless links. OFC (2024)
Simon Skrzypczak, Di Zhou, Wei Wei, Dalal Fadil, Dominique Vignaud, Emiliano Pallecchi, Henri Happy
Devices and circuits for HF applications based on 2D materials. DCIS (2023)
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Wei Wei, Emiliano Pallecchi, Henri Happy, David Jiménez
Straightforward bias- and frequency-dependent small-signal model extraction for single-layer graphene FETs. Microelectron. J. 133 (2023)
Myungsoo Kim, Emiliano Pallecchi, Henri Happy, Deji Akinwande
Single-Pole-Double-Throw RF switches based on monolayer MoS2. DRC (2021)
D. Fadi, W. Wei, Emiliano Pallecchi, M. Anderson, J. Stake, Marina Deng, Sébastien Fregonese, Thomas Zimmer, Henri Happy
2D RF Electronics: from devices to circuits - challenges and applications. DRC (2018)
Vikram Passi, Amit Gahoi, Jasper Ruhkopf, Satender Kataria, F. Vaurette, Emiliano Pallecchi, Henri Happy, Max C. Lemme
Contact resistance Study of "edge-contacted" metal-graphene interfaces. ESSDERC (2016)
Jorgue Daniel Aguirre Morales, Sébastien Fregonese, C. Mukherjee, Cristell Maneux, Thomas Zimmer, W. Wei, Henri Happy
Physics-based electrical compact model for monolayer Graphene FETs. ESSDERC (2016)
C. Mukherjee, Jorgue Daniel Aguirre Morales, Sébastien Fregonese, Thomas Zimmer, Cristell Maneux, Henri Happy, W. Wei
Characterization and modeling of low-frequency noise in CVD-grown graphene FETs. ESSDERC (2015)
C. Mukherjee, Sébastien Fregonese, Thomas Zimmer, Cristell Maneux, Henri Happy, David Mele
Qualitative assessment of epitaxial graphene FETs on SiC substrates via pulsed measurements and temperature variation. ESSDERC (2014)
S. Bollaert, Yvon Cordier, M. Zaknoune, T. Parenty, Henri Happy, Alain Cappy
Hemt's capability for millimeter wave applications. Ann. des Télécommunications 56 (1-2) (2001)
Jocelyn Alamkan, Henri Happy, Yvon Cordier, Alain Cappy
Modelling of pseudomorphic AlGaAs/GaInAs/AlGaAs layers using selfconsistent approach. Eur. Trans. Telecommun. 1 (4) (1990)