Hans-Martin Rein

Publication Activity (10 Years)

Years Active: 1992-2012
Publications (10 Years): 0

Top Venues

IEEE J. Solid State Circuits

Publications

Nils Pohl, Tobias Klein, Klaus Aufinger, Hans-Martin Rein
A Low-Power Wideband Transmitter Front-End Chip for 80 GHz FMCW Radar Systems With Integrated 23 GHz Downconverter VCO. IEEE J. Solid State Circuits 47 (9) (2012)
Nils Pohl, Hans-Martin Rein, Thomas Musch, Klaus Aufinger, Josef Hausner
SiGe Bipolar VCO With Ultra-Wide Tuning Range at 80 GHz Center Frequency. IEEE J. Solid State Circuits 44 (10) (2009)
Wolfgang Steiner, Hans-Martin Rein, Jürgen Berntgen
Substrate coupling in a high-gain 30-Gb/s SiGe amplifier-modeling, suppression, and measurement. IEEE J. Solid State Circuits 40 (10) (2005)
Hao Li, Hans-Martin Rein, Thomas Suttorp, Josef Böck
Fully integrated SiGe VCOs with powerful output buffer for 77-GHz automotive Radar systems and applications around 100 GHz. IEEE J. Solid State Circuits 39 (10) (2004)
Alexander Schild, Hans-Martin Rein, Jens Müllrich, Lars Altenhain, Jürgen Blank, Karl Schrödinger
High-gain SiGe transimpedance amplifier array for a 12×10 Gb/s parallel optical-fiber link. IEEE J. Solid State Circuits 38 (1) (2003)
Hao Li, Hans-Martin Rein
Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology. IEEE J. Solid State Circuits 38 (2) (2003)
Matthias Rickelt, Hans-Martin Rein
A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuits. IEEE J. Solid State Circuits 37 (9) (2002)
Jens Müllrich, Herbert Thurner, Ernst Müllner, Joseph F. Jensen, William E. Stanchina, Michael Kardos, Hans-Martin Rein
High-gain transimpedance amplifier in InP-based HBT technology for the receiver in 40-Gb/s optical-fiber TDM links. IEEE J. Solid State Circuits 35 (9) (2000)
Michael Schröter, Hans-Martin Rein, Winfried Rabe, Reinhard Reimann, Hans-Joachim Wassener, Andreas Koldehoff
Physics- and process-based bipolar transistor modeling for integrated circuit design. IEEE J. Solid State Circuits 34 (8) (1999)
R. Schmid, Thomas F. Meister, Mirjana Rest, Hans-Martin Rein
SiGe driver circuit with high output amplitude operating up to 23 Gb/s. IEEE J. Solid State Circuits 34 (6) (1999)
Martin Pfost, Hans-Martin Rein
Modeling and measurement of substrate coupling in Si-bipolar IC's up to 40 GHz. IEEE J. Solid State Circuits 33 (4) (1998)
Martin Pfost, Hans-Martin Rein, Thomas Holzwarth
Modeling substrate effects in the design of high-speed Si-bipolar ICs. IEEE J. Solid State Circuits 31 (10) (1996)
Alfred Felder, Michael Möller, Josef Popp, Josef Böck, Hans-Martin Rein
46 Gb/s DEMUX, 50 Gb/s MUX, and 30 GHz static frequency divider in silicon bipolar technology. IEEE J. Solid State Circuits 31 (4) (1996)
Michael Neuhäuser, Hans-Martin Rein, Horst Wernz
Low-noise, high-gain Si-bipolar preamplifiers for 10 Gb/s optical-fiber links-design and realization. IEEE J. Solid State Circuits 31 (1) (1996)
Hans-Martin Rein, Michael Möller
Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/s. IEEE J. Solid State Circuits 31 (8) (1996)
Michael Schröter, Hans-Martin Rein
Investigation of very fast and high-current transients in digital bipolar IC's using both a new compact model and a device simulator. IEEE J. Solid State Circuits 30 (5) (1995)
Hans-Martin Rein, Rolf Schmid, Peter Weger, Tony Smith, Thomas Herzog, Rudolf Lachner
A versatile Si-bipolar driver circuit with high output voltage swing for external and direct laser modulation in 10 Gb/s optical-fiber links. IEEE J. Solid State Circuits 29 (9) (1994)
Michael Möller, Hans-Martin Rein, Horst Wernz
13 Gb/s Si-bipolar AGC amplifier IC with high gain and wide dynamic range for optical-fiber receivers. IEEE J. Solid State Circuits 29 (7) (1994)
Hans-Martin Rein
Hochgeschwindigkeits-Schaltungen in Silizium-Bipolartechnologie / High-speed integrated circuits in silicon bipolar technology. it Inf. Technol. 34 (4) (1992)