Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs.
Tian-Li WuDenis MarconBrice De JaegerMarleen Van HoveBenoit BakerootSteve StoffelsGuido GroesenekenStefaan DecoutereRobin RoelofsPublished in: IRPS (2015)