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Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs.

Tian-Li WuDenis MarconBrice De JaegerMarleen Van HoveBenoit BakerootSteve StoffelsGuido GroesenekenStefaan DecoutereRobin Roelofs
Published in: IRPS (2015)
Keyphrases
  • gate dielectrics
  • information systems
  • management information systems
  • real time
  • genetic algorithm
  • gray level
  • evaluation method
  • evaluation metrics
  • evaluation methods
  • evaluation model
  • waveguide