Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process.
Yuki YamashitaSteve StoffelsNiels PosthumaKaren GeensXiangdong LiJun FurutaStefaan DecoutereKazutoshi KobayashiPublished in: IEICE Electron. Express (2019)