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Matthew Guidry
ORCID
Publication Activity (10 Years)
Years Active: 2019-2024
Publications (10 Years): 8
Top Topics
Significantly Reduced
Gallium Arsenide
Rotation Invariant
Intel Xeon
Top Venues
DRC
IRPS
BCICTS
SC Workshops
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Publications
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Boyu Wang
,
Kamruzzaman Khan
,
Emre Akso
,
Henry Collins
,
Tanmay Chavan
,
Matthew Guidry
,
Umesh K. Mishra
Self-aligned Scaled Planar N-polar GaN HEMTs with Raised Regrowth.
DRC
(2024)
Marco Saro
,
Francesco de Pieri
,
Andrea Carlotto
,
Mirko Fornasier
,
Fabiana Rampazzo
,
Carlo De Santi
,
Gaudenzio Meneghesso
,
Matteo Meneghini
,
Enrico Zanoni
,
Davide Bisi
,
Matthew Guidry
,
Stacia Keller
,
Umesh K. Mishra
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects.
IRPS
(2024)
J. Eric Coulter
,
Michael D. Weiner
,
Aaron Jezghani
,
Matthew Guidry
,
Rubén Lara
,
Fang (Cherry) Liu
,
Allan Metts
,
Ronald Rahaman
,
Kenneth J. Suda
,
Peter Wan
,
Gregory Willcox
,
Deirdre Womack
,
Dan Zhou
ICE 2.0: Restructuring and Growing an Instructional HPC Cluster.
SC Workshops
(2023)
Emre Akso
,
Christopher Clymore
,
Wenjian Liu
,
Henry Collins
,
Brian Romanczyk
,
Weiyi Li
,
Nirupam Hatui
,
Christian Wurm
,
Stacia Keller
,
Matthew Guidry
,
Umesh K. Mishra
Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz.
DRC
(2023)
Francesca Chiocchetta
,
Claudia Calascione
,
Carlo De Santi
,
Chandan Sharma
,
Fabiana Rampazzo
,
Xun Zheng
,
Brian Romanczyk
,
Matthew Guidry
,
Haoran Li
,
Stacia Keller
,
Umesh K. Mishra
,
Gaudenzio Meneghesso
,
Matteo Meneghini
,
Enrico Zanoni
Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs.
IRPS
(2021)
Brian Markman
,
Simone Tommaso Suran Brunelli
,
Matthew Guidry
,
Logan Whitaker
,
Mark J. W. Rodwell
Lg = 40nm Composite Channel MOS-HEMT Exhibiting fτ = 420 GHz, fmax = 562 GHz.
DRC
(2021)
Pawana Shrestha
,
Matthew Guidry
,
Brian Romanczyk
,
Rohit R. Karnaty
,
Nirupam Hatui
,
Christian Wurm
,
Athith Krishna
,
Shubhra S. Pasayat
,
Stacia Keller
,
James F. Buckwalter
,
Umesh K. Mishra
A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT.
DRC
(2020)
Rohit R. Karnaty
,
Umesh K. Mishra
,
James F. Buckwalter
,
Matthew Guidry
,
Pawana Shrestha
,
Brian Romanczyk
,
Nirupam Hatui
,
Xun Zheng
,
Christian Wurm
,
Haoran Li
,
Stacia Keller
Virtual-Source Modeling of N-polar GaN MISHEMTS.
BCICTS
(2019)