Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs.

Davide Bisi Antonio Stocco Isabella Rossetto Matteo Meneghini Fabiana Rampazzo Alessandro Chini Fabio Soci Alessio Pantellini Claudio Lanzieri Piero Gamarra Cedric Lacam M. Tordjman Marie-Antoinette di Forte-Poisson Davide De Salvador Marco Bazzan Gaudenzio Meneghesso Enrico Zanoni

Published in: Microelectron. Reliab. (2015)

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