Muhammad Ashraful Alam

Publication Activity (10 Years)

Years Active: 2001-2024
Publications (10 Years): 22

Top Topics

Semiconductor Manufacturing

Top Venues

IEEE Trans. Biomed. Eng.

IEEE Trans. Emerg. Top. Comput. Intell.

Publications

S. Chandra Mouli, Muhammad Ashraful Alam, Bruno Ribeiro
MetaPhysiCa: Improving OOD Robustness in Physics-informed Machine Learning. ICLR (2024)
Amandeep Singh Bhatia, Sabre Kais, Muhammad Ashraful Alam
Robustness of Quantum Federated Learning (QFL) Against "Label Flipping Attacks" for Lithography Hotspot Detection in Semiconductor Manufacturing. IRPS (2024)
Md. Asaduz Zaman Mamun, Nathan J. Conrad, Saeed Mohammadi, Muhammad Ashraful Alam
Validating Supply Chain against Recycled COTS ICs using I/O Pad Transistors: A Zero-Area Intrinsic Odometer Approach. IRPS (2024)
Jabir Bin Jahangir, Muhammad Ashraful Alam
Physics-guided machine learning predicts the planet-scale performance of solar farms with sparse, heterogeneous, public data. CoRR (2024)
Nicolò Zagni, Francesco Maria Puglisi, Paolo Pavan, Muhammad Ashraful Alam
-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges. Proc. IEEE 111 (2) (2023)
Sruthi M. P, Md. Asaduz Zaman Mamun, Deleep R. Nair, Anjan Chakravorty, Nandita DasGupta, Amitava DasGupta, Muhammad Ashraful Alam
Cross-coupled Self-Heating and Consequent Reliability Issues in GaN-Si Hetero-integration: Thermal Keep-Out-Zone Quantified. IRPS (2023)
S. Chandra Mouli, Muhammad Ashraful Alam, Bruno Ribeiro
MetaPhysiCa: OOD Robustness in Physics-informed Machine Learning. CoRR (2023)
Md. Asaduz Zaman Mamun, Amar Mavinkurve, Michiel van Soestbergen, Muhammad Ashraful Alam
Transient Leakage Current as a Non-destructive Probe of Wire-bond Electrochemical Failures. IRPS (2023)
Zhuocheng Zhang, Zehao Lin, Chang Niu, Mengwei Si, Muhammad Ashraful Alam, Peide D. Ye
Ultrahigh Bias Stability of ALD In2O3 FETs Enabled by High Temperature O2 Annealing. VLSI Technology and Circuits (2023)
Xin Jin, Ajanta Saha, Hongjie Jiang, Muhammed Ramazan Oduncu, Qingyu Yang, Sotoudeh Sedaghat, Kerry Maize, Jan P. Allebach, Ali Shakouri, Nicholas Glassmaker, Alexander Wei, Rahim Rahimi, Muhammad Ashraful Alam
Steady-State and Transient Performance of Ion-Sensitive Electrodes Suitable for Wearable and Implantable Electro-Chemical Sensing. IEEE Trans. Biomed. Eng. 69 (1) (2022)
Md. Asaduz Zaman Mamun, Muhammad Ashraful Alam
Reduced Relative Humidity (RH) Enhances the Corrosion-Limited Lifetime of Self-Heated IC: Peck's equation Generalized. IRPS (2022)
Vivek Dixit, Raja Selvarajan, Tamer Aldwairi, Yaroslav Koshka, Mark A. Novotny, Travis S. Humble, Muhammad Ashraful Alam, Sabre Kais
Training a Quantum Annealing Based Restricted Boltzmann Machine on Cybersecurity Data. IEEE Trans. Emerg. Top. Comput. Intell. 6 (3) (2022)
Jabir Bin Jahangir, Md. Al-Mahmud, Md. Shahadat Sarker Shakir, Anisul Haque, Muhammad Ashraful Alam, M. Ryyan Khan
A Critical Analysis of Bifacial Solar Farm Configurations: Theory and Experiments. IEEE Access 10 (2022)
Bikram Kishore Mahajan, Yen-Pu Chen, Ulisses Alberto Heredia Rivera, Rahim Rahimi, Muhammad Ashraful Alam
Correlated Effects of Radiation and Hot Carrier Degradation on the Performance of LDMOS Transistors. IRPS (2022)
Habeel Alam, Muhammad Ashraful Alam, Nauman Zafar Butt
Techno Economic Modeling for Agrivoltaics: Can Agrivoltaics be more profitable than Ground mounted PV? CoRR (2022)
Bikram Kishore Mahajan, Yen-Pu Chen, Muhammad Ashraful Alam, Dhanoop Varghese, Srikanth Krishnan, Vijay Reddy
A Critical Examination of the TCAD Modeling of Hot Carrier Degradation for LDMOS Transistors. IRPS (2022)
Bikram Kishore Mahajan, Yen-Pu Chen, Dhanoop Varghese, Vijay Reddy, Srikanth Krishnan, Muhammad Ashraful Alam
Quantifying Region-Specific Hot Carrier Degradation in LDMOS Transistors Using a Novel Charge Pumping Technique. IRPS (2021)
Somali Chaterji, Parinaz Naghizadeh, Muhammad Ashraful Alam, Saurabh Bagchi, Mung Chiang, David Corman, Brian J. Henz, Suman Jana, Na Li, Shaoshuai Mou, Meeko Oishi, Chunyi Peng, Tiark Rompf, Ashutosh Sabharwal, Shreyas Sundaram, James Weimer, Jennifer Weller
Resilient Cyberphysical Systems and their Application Drivers: A Technology Roadmap. CoRR (2020)
Xin Jin, Muhammad Ashraful Alam
Generalized Modeling Framework of Metal Oxide-Based Non-Enzymatic Glucose Sensors: Concepts, Methods, and Challenges. IEEE Trans. Biomed. Eng. 67 (3) (2020)
Yen-Pu Chen, Bikram Kishore Mahajan, Dhanoop Varghese, Srikanth Krishnan, Vijay Reddy, Muhammad Ashraful Alam
A Novel 'I-V Spectroscopy' Technique to Deconvolve Threshold Voltage and Mobility Degradation in LDMOS Transistors. IRPS (2020)
Woojin Ahn, Yen-Pu Chen, Muhammad Ashraful Alam
An Analytical Transient Joule Heating Model for an Interconnect in a Modern IC: Material Selection (Cu, Co, Ru) and Cooling Strategies. IRPS (2019)
SangHoon Shin, Yen-Pu Chen, Woojin Ahn, Honglin Guo, Byron Williams, Jeff West, Tom Bonifield, Dhanoop Varghese, Srikanth Krishnan, Muhammad Ashraful Alam
High voltage time-dependent dielectric breakdown in stacked intermetal dielectrics. IRPS (2018)
Mengwei Si, SangHoon Shin, Nathan J. Conrad, Jiangjiang Gu, Jingyun Zhang, Muhammad Ashraful Alam, Peide D. Ye
Characterization and reliability of III-V gate-all-around MOSFETs. IRPS (2015)
D. Varghese, V. Reddy, S. Krishnan, Muhammad Ashraful Alam
OFF-state degradation and correlated gate dielectric breakdown in high voltage drain extended transistors: A review. Microelectron. Reliab. 54 (8) (2014)
Muhammad Ashraful Alam, Masud Hasan
Computing Nice Projections of Convex Polyhedra. Int. J. Comput. Geom. Appl. 21 (1) (2011)
Muhammad Ashraful Alam, Masud Hasan
Computing Nice Projections of Convex Polyhedra. WALCOM (2008)
Muhammad Ashraful Alam
Reliability- and process-variation aware design of integrated circuits. Microelectron. Reliab. 48 (8-9) (2008)
Kunhyuk Kang, Muhammad Ashraful Alam, Kaushik Roy
Characterization of NBTI induced temporal performance degradation in nano-scale SRAM array using IDDQ. ITC (2007)
Kunhyuk Kang, Haldun Kufluoglu, Kaushik Roy, Muhammad Ashraful Alam
Impact of Negative-Bias Temperature Instability in Nanoscale SRAM Array: Modeling and Analysis. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 26 (10) (2007)
Bipul Chandra Paul, Kunhyuk Kang, Haldun Kufluoglu, Muhammad Ashraful Alam, Kaushik Roy
Negative Bias Temperature Instability: Estimation and Design for Improved Reliability of Nanoscale Circuits. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 26 (4) (2007)
Kunhyuk Kang, Keejong Kim, Ahmad E. Islam, Muhammad Ashraful Alam, Kaushik Roy
Characterization and Estimation of Circuit Reliability Degradation under NBTI using On-Line IDDQ Measurement. DAC (2007)
Kunhyuk Kang, Sang Phill Park, Kaushik Roy, Muhammad Ashraful Alam
Estimation of statistical variation in temporal NBTI degradation and its impact on lifetime circuit performance. ICCAD (2007)
Muhammad Ashraful Alam, Haldun Kufluoglu, D. Varghese, S. Mahapatra
A comprehensive model for PMOS NBTI degradation: Recent progress. Microelectron. Reliab. 47 (6) (2007)
Bipul Chandra Paul, Kunhyuk Kang, Haldun Kufluoglu, Muhammad Ashraful Alam, Kaushik Roy
Temporal performance degradation under NBTI: estimation and design for improved reliability of nanoscale circuits. DATE (2006)
Kunhyuk Kang, Haldun Kufluoglu, Muhammad Ashraful Alam, Kaushik Roy
Efficient Transistor-Level Sizing Technique under Temporal Performance Degradation due to NBTI. ICCD (2006)
Muhammad Ashraful Alam, S. Mahapatra
A comprehensive model of PMOS NBTI degradation. Microelectron. Reliab. 45 (1) (2005)
Muhammad Ashraful Alam
Software Security in Bangladesh with .NET Framework: A Roadmap. ITCC (2) (2004)
Simona Donati Guerrieri, Fabrizio Bonani, Giovanni Ghione, Muhammad Ashraful Alam
A new analytical model for high frequency MOSFET noise. CICC (2001)