Peide D. Ye

Publication Activity (10 Years)

Years Active: 2015-2023
Publications (10 Years): 16

Top Topics

Schottky Barrier

Mathematical Analysis

Silicon Nitride

Electrical Properties

Top Venues

VLSI Technology and Circuits

Publications

Jie Zhang, Zhuocheng Zhang, Zehao Lin, Ke Xu, Hongyi Dou, Bo Yang, Xinghang Zhang, Haiyan Wang, Peide D. Ye
, SS of 68 mV/dec, Normal-off Operation and High Positive Gate Bias Stability. VLSI Technology and Circuits (2023)
Dongqi Zheng, Adam Charnas, Jian-Yu Lin, Jackson Anderson, Dana Weinstein, Peide D. Ye
Ultrathin Atomic-Layer-Deposited In2O3 Radio-Frequency Transistors with Record High fT of 36 GHz and BEOL Compatibility. VLSI Technology and Circuits (2023)
Zhuocheng Zhang, Zehao Lin, Chang Niu, Mengwei Si, Muhammad Ashraful Alam, Peide D. Ye
Ultrahigh Bias Stability of ALD In2O3 FETs Enabled by High Temperature O2 Annealing. VLSI Technology and Circuits (2023)
Zehao Lin, Mengwei Si, Peide D. Ye
Cycles without VT Drift Penalty. VLSI Technology and Circuits (2022)
Xiao Lyu, Pragya R. Shrestha, Mengwei Si, Panni Wang, Junkang Li, Kin P. Cheung, Shimeng Yu, Peide D. Ye
Determination of Domain Wall Velocity and Nucleation Time by Switching Dynamics Studies of Ferroelectric Hafnium Zirconium Oxide. VLSI Technology and Circuits (2022)
Adam Charnas, Jackson Anderson, Jie Zhang, Dongqi Zheng, Dana Weinstein, Peide D. Ye
Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure. DRC (2022)
Pai-Ying Liao, Sami Alajlouni, Mengwei Si, Zhuocheng Zhang, Zehao Lin, Jinhyun Noh, Calista Wilk, Ali Shakouri, Peide D. Ye
Thermal Studies of BEOL-compatible Top-Gated Atomically Thin ALD In2O3 FETs. VLSI Technology and Circuits (2022)
Mengwei Si, Xiao Lyu, Peide D. Ye
Modeling of Leakage-Assist-Switching in Ferroelectric/Dielectric Stack. DRC (2019)
Jinhyun Noh, Mengwei Si, Hong Zhou, Marko J. Tadjer, Peide D. Ye
The Impact of Substrates on the Performance of Top-Gate p-Ga203 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on Diamond. DRC (2018)
Sami Alghamdi, Mengwei Si, Lingming Yang, Peide D. Ye
Low frequency noise in MOS2 negative capacitance field-effect transistor. IRPS (2018)
Pai-Ying Liao, Mengwei Si, Gang Qiu, Peide D. Ye
: Synthesis, ReRAM, and FeRAM. DRC (2018)
Peide D. Ye
Steep-Slope Hysteresis-Free Negative-Capacitance 2D Transistors. DRC (2018)
Gang Qiu, Mengwei Si, Yixiu Wang, Xiao Lyu, Wenzhuo Wu, Peide D. Ye
High-Performance Few-Layer Tellurium CMOS Devices Enabled by Atomic Layer Deposited Dielectric Doping Technique. DRC (2018)
Sami Alghamdi, Wonil Chung, Mengwei Si, Peide D. Ye
Time Response of Polarization Switching in Ge Hafnium Zirconium Oxide Nanowire Ferroelectric Field-effect Transistors. DRC (2018)
Wonil Chung, Mengwei Si, Peide D. Ye
Alleviation of Short Channel Effects in Ge Negative Capacitance pFinFETs. DRC (2018)
Mengwei Si, SangHoon Shin, Nathan J. Conrad, Jiangjiang Gu, Jingyun Zhang, Muhammad Ashraful Alam, Peide D. Ye
Characterization and reliability of III-V gate-all-around MOSFETs. IRPS (2015)