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Time Response of Polarization Switching in Ge Hafnium Zirconium Oxide Nanowire Ferroelectric Field-effect Transistors.
Sami Alghamdi
Wonil Chung
Mengwei Si
Peide D. Ye
Published in:
DRC (2018)
Keyphrases
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field effect transistors
steady state
high density
schottky barrier
mathematical analysis
semiconductor devices
silicon nitride
neural network
learning algorithm
reinforcement learning
d objects
thin film
chip design