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High-Performance Few-Layer Tellurium CMOS Devices Enabled by Atomic Layer Deposited Dielectric Doping Technique.

Gang QiuMengwei SiYixiu WangXiao LyuWenzhuo WuPeide D. Ye
Published in: DRC (2018)
Keyphrases
  • silicon dioxide
  • multi layer
  • low cost
  • single layer
  • upper layer
  • application layer