Kin P. Cheung

Publication Activity (10 Years)

Years Active: 2001-2023
Publications (10 Years): 4

Top Topics

Silicon Dioxide

Electrical Properties

Reliability Assessment

Top Venues

VLSI Technology and Circuits

Publications

Kin P. Cheung
V-Ramp test and gate oxide screening under the "lucky" defect model. IRPS (2023)
Xiao Lyu, Pragya R. Shrestha, Mengwei Si, Panni Wang, Junkang Li, Kin P. Cheung, Shimeng Yu, Peide D. Ye
Determination of Domain Wall Velocity and Nucleation Time by Switching Dynamics Studies of Ferroelectric Hafnium Zirconium Oxide. VLSI Technology and Circuits (2022)
Kin P. Cheung, Jason P. Campbell
Non-tunneling origin of the 1/f noise in SiC MOSFET. ICICDT (2018)
Kin P. Cheung
SiC power MOSFET gate oxide breakdown reliability - Current status. IRPS (2018)
Jason T. Ryan, Lan Wei, Jason P. Campbell, Ricki G. Southwick, Kin P. Cheung, Anthony S. Oates, H.-S. Philip Wong, John Suehle
Circuit-aware device reliability criteria methodology. ESSCIRC (2011)
Kin P. Cheung
Unifying the thermal-chemical and anode-hole-injection gate-oxide breakdown models. Microelectron. Reliab. 41 (2) (2001)
Kin P. Cheung
Impact of ESD protection device trigger transient on the reliability of ultra-thin gate oxide. Microelectron. Reliab. 41 (5) (2001)