Smart Material Implication Using Spin-Transfer Torque Magnetic Tunnel Junctions for Logic-in-Memory Computing.
Raffaele De RoseTommaso ZanottiFrancesco Maria PuglisiFelice CrupiPaolo PavanMarco LanuzzaPublished in: CoRR (2022)
Keyphrases
- random access memory
- transfer learning
- magnetic field
- knowledge transfer
- high speed
- eddy current
- design considerations
- endpoints
- memory requirements
- control algorithm
- dynamic model
- simulation model
- smart environments
- memory usage
- automated reasoning
- multi valued
- memory space
- logical framework
- limited memory
- read write
- asynchronous circuits
- line segments
- neural network