Login / Signup
Probing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterization.
Francesco Maria Puglisi
Felipe Costantini
Ben Kaczer
Luca Larcher
Paolo Pavan
Published in:
ESSDERC (2016)
Keyphrases
</>
low snr
wide range
high noise
low signal to noise ratio
noise level
random noise
small size
nano scale
data sets
defect detection
sampled data
noise model
median filter
noisy data
high precision
genetic algorithm
gaussian noise
low cost
multiple input
high resolution
field effect transistors