Andrea Padovani

Publication Activity (10 Years)

Years Active: 2010-2024
Publications (10 Years): 17

Top Topics

Generation Process

Silicon Nitride

Top Venues

Publications

Bastien Beltrando, Marco A. Villena, Mondol Anik Kumar, Shruba Gangopadhyay, Deepak Kamalanathan, E. Smith, N. Kazem, Ghazal Saheli, Stephen Weeks, Michael Haverty, Muthukumar Kaliappan, Andrea Padovani, S. Krishnan, J. Anthis, Luca Larcher, Milan Pesic
Self-rectifying non-volatile tunneling synapse: multiscale modeling augmented development. IMW (2024)
Milan Pesic, Bastien Beltrando, Tommaso Rollo, Cristian Zambelli, Andrea Padovani, Rino Micheloni, Rita Maji, Lisa Enman, Mark Saly, Yang Ho Bae, Jung Bae Kim, Dong Kil Yim, Luca Larcher
Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND. IRPS (2023)
Andrea Padovani, Paolo La Torraca, Jack Strand, Alexander L. Shluger, Valerio Milo, Luca Larcher
Towards a Universal Model of Dielectric Breakdown. IRPS (2023)
Milan Pesic, Bastien Beltrando, Andrea Padovani, Toshihiko Miyashita, Nam-Sung Kim, Luca Larcher
Electron-assisted switching in FeFETs: Memory window dynamics - retention - trapping mechanisms and correlation. IRPS (2022)
Andrea Padovani, Milan Pesic, Federico Nardi, Valerio Milo, Luca Larcher, Mondol Anik Kumar, Zunaid Baten
Reliability of Non-Volatile Memory Devices for Neuromorphic Applications: A Modeling Perspective (Invited). IRPS (2022)
Milan Pesic, Andrea Padovani, Tommaso Rollo, Bastien Beltrando, Jack Strand, Parnika Agrawal, Alexander L. Shluger, Luca Larcher
Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents. IMW (2022)
Milan Pesic, Bastien Beltrando, Andrea Padovani, Shruba Gangopadhyay, Muthukumar Kaliappan, Michael Haverty, Marco A. Villena, Enrico Piccinini, Matteo Bertocchi, Tony Chiang, Luca Larcher, Jack Strand, Alexander L. Shluger
Variability sources and reliability of 3D - FeFETs. IRPS (2021)
Fernando Leonel Aguirre, Andrea Padovani, Alok Ranjan, Nagarajan Raghavan, Nahuel Vega, Nahuel Muller, Sebastián Matías Pazos, Mario Debray, Joel Molina Reyes, Kin Leong Pey, Felix Palumbo
Spatio-Temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms. IRPS (2019)
Chen Wu, Adrian Chasin, Andrea Padovani, Alicja Lesniewska, Steven Demuynck, Kris Croes
Role of Defects in the Reliability of HfO2/Si-Based Spacer Dielectric Stacks for Local Interconnects. IRPS (2019)
Andrea Padovani, Milan Pesic, Mondol Anik Kumar, Pieter Blomme, Alexandre Subirats, Senthil Vadakupudhupalayam, Zunaid Baten, Luca Larcher
Understanding and Variability of Lateral Charge Migration in 3D CT-NAND Flash with and Without Band-Gap Engineered Barriers. IRPS (2019)
Andrea Padovani, Luca Larcher
Time-dependent dielectric breakdown statistics in SiO2 and HfO2 dielectrics: Insights from a multi-scale modeling approach. IRPS (2018)
David Z. Gao, Jack Strand, Al-Moatasem El-Sayed, Alexander L. Shluger, Andrea Padovani, Luca Larcher
Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films. IRPS (2018)
Andrea Padovani, Luca Larcher, Jiyong Woo, Hyunsang Hwang
A multiscale modeling approach for the simulation of OxRRAM devices. NVMTS (2017)
Mouhamad Alayan, Elisa Vianello, Barbara De Salvo, Luca Perniola, Andrea Padovani, Luca Larcher
-Based RRAM. IEEE Des. Test 34 (3) (2017)
Luca Larcher, Francesco Maria Puglisi, Andrea Padovani, Luca Vandelli, Paolo Pavan
Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials. PATMOS (2016)
Luca Larcher, Francesco Maria Puglisi, Andrea Padovani, Luca Vandelli, Paolo Pavan
Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials. PATMOS (2016)
Francesco Maria Puglisi, Luca Larcher, Andrea Padovani, Paolo Pavan
: Physics, Compact Modeling, and Variability Control. IEEE J. Emerg. Sel. Topics Circuits Syst. 6 (2) (2016)
Francesco Maria Puglisi, Luca Larcher, Andrea Padovani, Paolo Pavan
Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory. ESSDERC (2015)
Francesco Maria Puglisi, Paolo Pavan, Luca Vandelli, Andrea Padovani, Matteo Bertocchi, Luca Larcher
A microscopic physical description of RTN current fluctuations in HfOx RRAM. IRPS (2015)
Francesco Maria Puglisi, Paolo Pavan, Luca Larcher, Andrea Padovani
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS. ESSDERC (2014)
Francesco Maria Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher
A compact model of hafnium-oxide-based resistive random access memory. ICICDT (2013)
Gennadi Bersuker, Brian Butcher, David Gilmer, Paul Kirsch, Luca Larcher, Andrea Padovani
Connecting RRAM performance to the properties of the hafnia-based dielectrics. ESSDERC (2013)
Francesco Maria Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher
Random telegraph noise analysis to investigate the properties of active traps of HfO2-based RRAM in HRS. ESSDERC (2013)
Andrea Padovani, Luca Larcher, Paolo Pavan
Compact modeling of TANOS program/erase operations for SPICE-like circuit simulations. Microelectron. J. 44 (1) (2013)
Francesco Maria Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher, Gennadi Bersuker
Random Telegraph Signal noise properties of HfOx RRAM in high resistive state. ESSDERC (2012)
Luca Larcher, Andrea Padovani
High-kappa related reliability issues in advanced non-volatile memories. Microelectron. Reliab. 50 (9-11) (2010)
Luca Larcher, Andrea Padovani
Fundamental reliability issues of advanced charge-trapping Flash memory devices. ICECS (2010)