Kin Leong Pey

Publication Activity (10 Years)

Years Active: 2002-2023
Publications (10 Years): 20

Top Topics

Silicon Dioxide

Spatial Correlation

Top Venues

Microelectron. Reliab.

Publications

Tiang Teck Tan, Yu-Yun Wang, Joel Tan, Tian-Li Wu, Nagarajan Raghavan, Kin Leong Pey
A New Methodology to Precisely Induce Wake-Up for Reliability Assessment of Ferroelectric Devices. IRPS (2023)
J. Tan, J. H. Lim, Jae Hyun Kwon, Vinayak Bharat Naik, Nagarajan Raghavan, Kin Leong Pey
Backhopping-based STT-MRAM Poisson Spiking Neuron for Neuromorphic Computation. IRPS (2023)
Laiqiang Luo, Kalya Shubhakar, Sen Mei, Nagarajan Raghavan, Fan Zhang, Danny Shum, Kin Leong Pey
Reliability and Breakdown Study of Erase Gate Oxide in Split-Gate Non-Volatile Memory Device. IRPS (2020)
Alok Ranjan, Sean J. O'Shea, Michel Bosman, J. Molina, Nagarajan Raghavan, Kin Leong Pey
Correlation of Dielectric Breakdown and Nanoscale Adhesion in Silicon Dioxide Thin Films. IRPS (2020)
Jia Hao Lim, Nagarajan Raghavan, Jae Hyun Kwon, Tae Young Lee, Robin Chao, Nyuk Leong Chung, Kazutaka Yamane, Naganivetha Thiyagarajah, Vinayak Bharat Naik, Kin Leong Pey
Origins and Signatures of Tail Bit Failures in Ultrathin MgO Based STT-MRAM. IRPS (2020)
Kin Leong Pey, Lucienne Blessing, Bige Tunçer
A transformative engineering and architecture education. FIE (2020)
Fernando Leonel Aguirre, Andrea Padovani, Alok Ranjan, Nagarajan Raghavan, Nahuel Vega, Nahuel Muller, Sebastián Matías Pazos, Mario Debray, Joel Molina Reyes, Kin Leong Pey, Felix Palumbo
Spatio-Temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms. IRPS (2019)
Kin Leong Pey, Alok Ranjan, Nagarajan Raghavan, Kalya Shubhakar, Sean J. O'Shea
Dielectric Breakdown in 2D Layered Hexagonal Boron Nitride - The Knowns and the Unknowns. IRPS (2019)
Jia Hao Lim, Nagarajan Raghavan, Vinayak Bharat Naik, Jae Hyun Kwon, Kazutaka Yamane, H. Yang, K. H. Lee, Kin Leong Pey
Correct Extrapolation Model for TDDB of STT-MRAM MgO Magnetic Tunnel Junctions. IRPS (2019)
Alok Ranjan, Nagarajan Raghavan, Sean J. O'Shea, Sen Mei, Michel Bosman, Kalya Shubhakar, Kin Leong Pey
Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics. IRPS (2018)
Xuan Feng, Nagarajan Raghavan, Sen Mei, Shurong Dong, Kin Leong Pey, Hei Wong
Statistical nature of hard breakdown recovery in high-κ dielectric stacks studied using ramped voltage stress. Microelectron. Reliab. (2018)
Venkat Krishnan Ravikumar, Gabriel Lim, Jiann Min Chin, Kin Leong Pey, Joel K. W. Yang
Understanding spatial resolution of laser voltage imaging. Microelectron. Reliab. (2018)
Jia Hao Lim, Nagarajan Raghavan, Sen Mei, Vinayak Bharat Naik, Jae Hyun Kwon, S. M. Noh, B. Liu, E. H. Toh, Nyuk Leong Chung, Robin Chao, K. H. Lee, Kin Leong Pey
Area and pulsewidth dependence of bipolar TDDB in MgO magnetic tunnel junction. IRPS (2018)
Oka Kurniawan, Norman Tiong Seng Lee, Subhajit Datta, Nachamma Sockalingam, Kin Leong Pey
Effectiveness of Physical Robot Versus Robot Simulator in Teaching Introductory Programming. TALE (2018)
U-Xuan Tan, Yajuan Zhu, Chee Huei Lee, Tin-Lam Toh, Guan Kheng Sze, Shirley Tay, Darren Wong, Kin Leong Pey
Preliminary study of integrated physics and mathematics bridging course. EDUCON (2017)
Xuan Feng, Shurong Dong, Hei Wong, Danqun Yu, Kin Leong Pey, Kalya Shubhakar, W. S. Lau
stack. Microelectron. Reliab. 61 (2016)
Danqun Yu, W. S. Lau, Hei Wong, Xuan Feng, Shurong Dong, Kin Leong Pey
/W MIM capacitors with the thickness of the bottom W electrode. Microelectron. Reliab. 61 (2016)
Kalya Shubhakar, Sen Mei, Michel Bosman, Nagarajan Raghavan, Alok Ranjan, Sean J. O'Shea, Kin Leong Pey
-based MIM stacks: Computational and physical insight. Microelectron. Reliab. 64 (2016)
Alok Ranjan, Nagarajan Raghavan, Joel Molina Reyes, Sean J. O'Shea, Kalya Shubhakar, Kin Leong Pey
RRAM using conductive AFM. Microelectron. Reliab. 64 (2016)
Sen Mei, Michel Bosman, Nagarajan Raghavan, Xing Wu, Kin Leong Pey
defect size in Ni/dielectric/Si RRAM devices. Microelectron. Reliab. 61 (2016)
Kalya Shubhakar, Michel Bosman, O. A. Neucheva, Y. C. Loke, Nagarajan Raghavan, R. Thamankar, Alok Ranjan, Sean J. O'Shea, Kin Leong Pey
dielectric stacks for failure analysis. Microelectron. Reliab. 55 (9-10) (2015)
Nagarajan Raghavan, Daniel D. Frey, Michel Bosman, Kin Leong Pey
Monte Carlo model of reset stochastics and failure rate estimation of read disturb mechanism in HfOx RRAM. IRPS (2015)
Nagarajan Raghavan, Michel Bosman, Kin Leong Pey
Spectroscopy of SILC trap locations and spatial correlation study of percolation path in the high-κ and interfacial layer. IRPS (2015)
Nagarajan Raghavan, Daniel D. Frey, Michel Bosman, Kin Leong Pey
Statistics of retention failure in the low resistance state for hafnium oxide RRAM using a Kinetic Monte Carlo approach. Microelectron. Reliab. 55 (9-10) (2015)
Nagarajan Raghavan, Michel Bosman, Kin Leong Pey
Probabilistic insight to possibility of new metal filament nucleation during repeated cycling of conducting bridge memory. Microelectron. Reliab. 55 (9-10) (2015)
Nagarajan Raghavan, Daniel D. Frey, Kin Leong Pey
Prognostic methodology for remaining useful life estimation of retention loss in nanoscale resistive switching memory. Microelectron. Reliab. 54 (9-10) (2014)
Nagarajan Raghavan, Michel Bosman, Daniel D. Frey, Kin Leong Pey
Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devices. Microelectron. Reliab. 54 (9-10) (2014)
Nagarajan Raghavan, Michel Bosman, Kin Leong Pey
Assessment of read disturb immunity in conducting bridge memory devices - A thermodynamic perspective. Microelectron. Reliab. 54 (9-10) (2014)
Nagarajan Raghavan, Kin Leong Pey, Kalya Shubhakar
High-κ dielectric breakdown in nanoscale logic devices - Scientific insight and technology impact. Microelectron. Reliab. 54 (5) (2014)
Kalya Shubhakar, Nagarajan Raghavan, Sunil Singh Kushvaha, Michel Bosman, Zhongrui Wang, Sean J. O'Shea, Kin Leong Pey
interfacial layer. Microelectron. Reliab. 54 (9-10) (2014)
Wee Loon Ng, Kheng Chok Tee, Junfeng Liu, Yong Chiang Ee, Oliver Aubel, Chuan Seng Tan, Kin Leong Pey
Robust Electromigration reliability through engineering optimization. Microelectron. Reliab. 54 (9-10) (2014)
Felix Palumbo, G. Condorelli, Salvatore Lombardo, Kin Leong Pey, C. H. Tung, L. J. Tang
Structure of the oxide damage under progressive breakdown. Microelectron. Reliab. 45 (5-6) (2005)
Kin Leong Pey, C. H. Tung, M. K. Radhakrishnan, L. J. Tang, Y. Sun, X. D. Wang, W. H. Lin
Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM. Microelectron. Reliab. 43 (9-11) (2003)
M. K. Radhakrishnan, Kin Leong Pey, C. H. Tung, W. H. Lin
Physical analysis of hard and soft breakdown failures in ultrathin gate oxides. Microelectron. Reliab. 42 (4-5) (2002)