Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM.
Kin Leong PeyC. H. TungM. K. RadhakrishnanL. J. TangY. SunX. D. WangW. H. LinPublished in: Microelectron. Reliab. (2003)