W. S. Lau

Publication Activity (10 Years)

Years Active: 1997-2016
Publications (10 Years): 2

Top Topics

Normal Operation

Integrated Circuit

Leakage Current

Multiresolution

Top Venues

Microelectron. Reliab.

Publications

Xuan Feng, Shurong Dong, Hei Wong, Danqun Yu, Kin Leong Pey, Kalya Shubhakar, W. S. Lau
stack. Microelectron. Reliab. 61 (2016)
Danqun Yu, W. S. Lau, Hei Wong, Xuan Feng, Shurong Dong, Kin Leong Pey
/W MIM capacitors with the thickness of the bottom W electrode. Microelectron. Reliab. 61 (2016)
Hailian Liang, Weidong Nie, Xiaofeng Gu, Shurong Dong, W. S. Lau
An investigation on capacitance-trigger ESD protection devices for high voltage integrated circuits. Microelectron. Reliab. 54 (6-7) (2014)
W. S. Lau, Peizhen Yang, S. Y. Siah, L. Chan
The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current. Microelectron. Reliab. 52 (11) (2012)
W. S. Lau, Peizhen Yang, Eng Hua Lim, Yee Ling Tang, Seow Wei Lai, V. L. Lo, S. Y. Siah, L. Chan
Observation of halo implant from the drain side reaching the source side and vice versa in extremely short p-channel transistors. Microelectron. Reliab. 50 (3) (2010)
W. S. Lau, Joy B. H. Tan, B. P. Singh
Formation of Ohmic contacts in AlGaN/GaN HEMT structures at 500 degreeC by Ohmic contact recess etching. Microelectron. Reliab. 49 (5) (2009)
W. S. Lau, Peizhen Yang, Jason Zhiwei Chian, V. Ho, C. H. Loh, S. Y. Siah, L. Chan
Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors. Microelectron. Reliab. 49 (1) (2009)
W. S. Lau, W. T. Wong, Joy B. H. Tan, B. P. Singh
Effect of a trace of water vapor on Ohmic contact formation for AlGaN/GaN epitaxial wafers. Microelectron. Reliab. 48 (5) (2008)
W. S. Lau, K. S. See, C. W. Eng, W. K. Aw, K. H. Jo, K. C. Tee, James Y. M. Lee, Elgin K. B. Quek, H. S. Kim, Simon T. H. Chan, L. Chan
Anomalous narrow width effect in p-channel metal-oxide-semiconductor surface channel transistors using shallow trench isolation technology. Microelectron. Reliab. 48 (6) (2008)
W. S. Lau, Peizhen Yang, C. W. Eng, V. Ho, C. H. Loh, S. Y. Siah, D. Vigar, L. Chan
of modern MOS transistors and its application to stress engineering. Microelectron. Reliab. 48 (4) (2008)
Huang Zhong, W. S. Lau, W. F. Sze, Y. S. Hung
Shape recovery from turntable sequence using rim reconstruction. Pattern Recognit. 41 (11) (2008)
W. S. Lau, Peizhen Yang, V. Ho, L. F. Toh, Y. Liu, S. Y. Siah, L. Chan
An explanation of the dependence of the effective saturation velocity on gate voltage in sub-0.1 µm metal-oxide-semiconductor transistors by quasi-ballistic transport theory. Microelectron. Reliab. 48 (10) (2008)
W. S. Lau, P. W. Qian, Taejoon Han, Nathan P. Sandler, S. T. Che, S. E. Ang, C. H. Tung, T. T. Sheng
and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si. Microelectron. Reliab. 47 (2-3) (2007)
Huang Zhong, W. S. Lau, W. F. Sze, Y. S. Hung
Shape Recovery from Turntable Image Sequence. ACCV (2) (2007)
Simon S. P. Shum, W. S. Lau, Matthew M. F. Yuen, Kai-Ming Yu
Solid reconstruction from orthographic views using 2-stage extrusion. Comput. Aided Des. 33 (1) (2001)
R. V. V. V. J. Rao, T. C. Chong, L. S. Tan, W. S. Lau
As gate ins. IEEE Trans. Reliab. 49 (2) (2000)
S. F. Lee, P. Roberts, W. S. Lau, S. K. Bhattacharyya
Sun Tzu's as business and management strategies for world class business excellence evaluation under QFD methodology. Bus. Process. Manag. J. 4 (2) (1998)
Simon S. P. Shum, W. S. Lau, Matthew Ming-Fai Yuen, Kai-Ming Yu
Solid reconstruction from orthographic opaque views using incremental extrusion. Comput. Graph. 21 (6) (1997)