and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si.
W. S. LauP. W. QianTaejoon HanNathan P. SandlerS. T. CheS. E. AngC. H. TungT. T. ShengPublished in: Microelectron. Reliab. (2007)
Keyphrases
- metal oxide
- chemical vapor deposition
- si sio
- leakage current
- x ray
- thin film
- gate insulator
- solid state
- high speed
- room temperature
- high density
- significantly lower
- high levels
- electron microscopy
- high rate
- electrical properties
- wide range
- high correlation
- small size
- highly correlated
- gate dielectrics
- silicon nitride
- real time
- high sensitivity
- high noise
- bit rate
- silicon dioxide
- low cost
- database systems
- genetic algorithm