Login / Signup

Anomalous narrow width effect in p-channel metal-oxide-semiconductor surface channel transistors using shallow trench isolation technology.

W. S. LauK. S. SeeC. W. EngW. K. AwK. H. JoK. C. TeeJames Y. M. LeeElgin K. B. QuekH. S. KimSimon T. H. ChanL. Chan
Published in: Microelectron. Reliab. (2008)
Keyphrases
  • metal oxide semiconductor
  • integrated circuit
  • field effect transistors
  • three dimensional
  • low cost
  • multimedia
  • high quality
  • anomaly detection
  • low power
  • hardware and software