Login / Signup

Reliability and Breakdown Study of Erase Gate Oxide in Split-Gate Non-Volatile Memory Device.

Laiqiang LuoKalya ShubhakarSen MeiNagarajan RaghavanFan ZhangDanny ShumKin Leong Pey
Published in: IRPS (2020)
Keyphrases
  • field effect transistors
  • silicon dioxide
  • leakage current
  • high density
  • statistical analysis
  • flash memory