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Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films.
David Z. Gao
Jack Strand
Al-Moatasem El-Sayed
Alexander L. Shluger
Andrea Padovani
Luca Larcher
Published in:
IRPS (2018)
Keyphrases
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electrical properties
leakage current
metal oxide
low voltage
silicon dioxide
silicon nitride
film thickness
power line
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