Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices.
S. S. Teja NibhanupudiDmitry VekslerAnupam RoyMatthew CoupinKevin C. MatthewsJamie WarnerGennadi BersukerJaydeep P. KulkarniSanjay K. BanerjeePublished in: DRC (2022)